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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
CV
»
12 papers on 1 page:
1
Carrier Removal in Electron Irradiated 4H and 6H SiC
Published in:
Silicon Carbide and Related Materials 2007
(p425)
C-V - and DLTS-Investigations of Pyramid-Shaped Ge Quantum Dots Embedded in N-Type Silicon
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIV
(p72)
Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20วบ Thick Ultra-Thin Stack Gate Dielectrics
Published in:
Ultra Clean Processing of Silicon Surfaces V
(p165)
Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC
Published in:
Silicon Carbide and Related Materials 2004
(p705)
Electrodeposition of Nanocrystalline CoNiFe Thin Films Prepared by Cyclic Voltammetry
Published in:
Eco-Materials Processing and Design X
(p731)
High Temperature Annealing Study of Al
2
O
3
Deposited by ALCVD on n-Type 4H-SiC
Published in:
Silicon Carbide and Related Materials 2005
(p1067)
Low-Temperature Performance of the Li[Li
0.2
Co
0.4
Mn
0.4
]O
2
Cathode Material Studied for Li-Ion Batteries
Published in:
Renewable and Sustainable Energy
(p3662)
Mapping on Bulk and Epitaxy Layer 4H-SiC
Published in:
Silicon Carbide and Related Materials - 2002
(p431)
Mechanism for the Formation of Elemental Sulfur from Modified Stretford Process
Published in:
Fundamental of Chemical Engineering
(p892)
Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC
Published in:
Silicon Carbide and Related Materials 2000
(p635)
The Al
2
O
3
/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique
Published in:
Silicon Carbide and Related Materials 2006
(p537)
The Ferroelectric and Electrical Properties of CaBi
4
Ti
4
O
15
Thin Films Prepared by Sol-Gel Technology
Published in:
Advanced Materials
(p891)
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