Keyword: "C/Si Ratio"
Papers by keyword:
1
2
>
Paper Title Page

4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles

Authors: Hiroaki Saitoh, Tsunenobu Kimoto

89

A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios

Authors: Giovanni Attolini, Bernard Enrico Watts, Matteo Bosi, Francesca Rossi, Ferenc Riesz

153

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

Authors: S. Hahn, Franziska Christine Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J.R. Niklas, Erik Janzén

405

Dependence of Micropipe Dissociation on Surface Orientation

Authors: Isaho Kamata, Hidekazu Tsuchida, Syunsuke Izumi, Takeshi Tawara, Kunikaza Izumi

379

Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition

Authors: René A. Stein, Bernd Thomas, Christian Hecht

89

Homoepitaxial Growth of 4H-SiC Thin Film Below 1000ºC by Microwave Plasma Chemical Vapor Deposition

Authors: Mitsuo Okamoto, Yasunori Tanaka, Ryouji Kosugi, Daisuke Takeuchi, Shinichi Nakashima, Shinichi Nishizawa, Kenji Fukuda, Hideyo Okushi, Kazuo Arai

299

Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle

Authors: Kazutoshi Kojima, Satchiko Ito, Akiyo Nagata, Hajime Okumura

141

Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence

Authors: T. Yamamoto, Tsunenobu Kimoto, Hiroyuki Matsunami

111

Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth

Authors: Yuuki Ishida, Tetsuo Takahashi, Kazutoshi Kojima, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida

213

Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC

Authors: Ioana Pintilie, K. Irmscher, Ulrike Grossner, Bengt G. Svensson, Bernd Thomas

461

Showing 1 to 10 of 17 Papers
1
2
>