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Articles by keyword: «Carbon Vacancy»

• Comparison of Ohmic Contact Characteristics of Different Metal on N Type 4H-SiC
  Published in: New Materials and Advanced Materials (p1529)
• Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p489)
• Deep Level Point Defects in Semi-Insulating SiC
  Published in: Silicon Carbide and Related Materials 2005 (p517)
• Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p453)
• Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials 2007 (p477)
• EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p465)
• Growth and Electrical Characterization of 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2006 (p35)
• High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
  Published in: Silicon Carbide and Related Materials 2001 (p23)
• Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials - 1999 (p221)
• Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional
  Published in: Silicon Carbide and Related Materials 2010 (p261)
• Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p401)
• Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p409)
• Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p559)
• Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
  Published in: Silicon Carbide and Related Materials 2006 (p603)
• Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p39)