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Articles by keyword: «Carrier Concentration»

• 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
  Published in: Silicon Carbide and Related Materials 2004 (p89)
• Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p275)
• Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
  Published in: Silicon Carbide and Related Materials 2003 (p905)
• Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1355)
• Characterization of the Structural and Electrical Properties of Ion Beam Sputtered ZnO Films
  Published in: Advanced Materials and Nanotechnology (p49)
• Deep Trap Concentrations from Three-Dimensional Carrier Concentration Profiles in Hydride Vapor Pressure Epitaxially-Grown GaN
  Published in: Defects and Diffusion Ceramics Abstracts (p35)
• Determination of Ge Fraction and Carrier Concentration in Si_1-XGe_x/Si by Capacitance-Voltage Method
  Published in: Manufacturing Science and Technology (p1568)
• Effect of Substrate Temperature on the Structural and Electrical Properties of MBE Grown ZnO
  Published in: Advanced Materials XII (p132)
• Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p901)
• Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si₂(CH₃)₆
  Published in: Silicon Carbide and Related Materials - 1999 (p711)
• Electrical Properties of Pulsed Laser Deposited ZnO Thin Films
  Published in: Nanomaterials and Devices: Processing and Applications (p121)
• Experimental Determination of Hall Factor for Hydrogenated In-Situ Phosphorus Doped Polysilicon Films
  Published in: Polycrystalline Semiconductors IV (p379)
• Graded Design of Carrier Concentration in PbTe by Heat-Treatment
  Published in: Functionally Graded Materials VII (p385)
• Growth and Characterization of Urea Doped p-Type ZnO Thin Film Grown by Pulsed Laser Deposition
  Published in: Nanomaterials and Devices: Processing and Applications (p127)
• Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium
  Published in: Materials Integration (p220)