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Articles by keyword: «Channel Mobility»

• (11-20) Face Channel MOSFET with Low On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p1119)
• 3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide
  Published in: Silicon Carbide and Related Materials 2010 (p645)
• 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2001 (p1215)
• 4H-SiC MOSFETs on (03-38) Face
  Published in: Silicon Carbide and Related Materials 2001 (p1065)
• 4H-SiC p-Channel MOSFETs with Epi-Channel Structure
  Published in: Silicon Carbide and Related Materials 2007 (p711)
• 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
  Published in: Silicon Carbide and Related Materials - 2002 (p769)
• A Study on the Electrical Properties of ZnO Based Transparent TFTs
  Published in: Advanced Materials Forum III (p68)
• Anomalously High Channel Mobility in SiC-MOSFETs with Al₂O₃/SiO_x/SiC Gate Structure
  Published in: Silicon Carbide and Related Materials 2007 (p683)
• Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p907)
• Challenges of High-Performance and High-Reliablity in SiC MOS Structures
  Published in: Silicon Carbide and Related Materials 2011 (p703)
• Channel Doped SiC-MOSFETs
  Published in: Silicon Carbide and Related Materials - 1999 (p1101)
• Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
  Published in: Silicon Carbide and Related Materials 2005 (p1293)
• Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
  Published in: Silicon Carbide and Related Materials 2005 (p971)
• Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
  Published in: Silicon Carbide and Related Materials 2011 (p781)
• Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length
  Published in: Silicon Carbide and Related Materials 2011 (p1113)