| Paper Title | Page |
|---|---|
|
(11-20) Face Channel MOSFET with Low On-Resistance Authors: Eiichi Okuno, Takeshi Endo, Jun Kawai, Toshio Sakakibara, Shoichi Onda |
1119 |
|
3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide Authors: Motoki Kobayashi, Hidetsugu Uchida, Akiyuki Minami, Toyokazu Sakata, Romain Esteve, Adolf Schöner |
645 |
|
4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching Authors: Qamar-ul Wahab, Hajime Kosugi, Hiroshi Yano, Christer Hallin, Tsunenobu Kimoto, Hiroyuki Matsunami |
1215 |
|
4H-SiC MOSFETs on (03-38) Face Authors: T. Hirao, Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami, Hiromu Shiomi |
1065 |
|
4H-SiC p-Channel MOSFETs with Epi-Channel Structure Authors: Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai |
711 |
|
4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications Authors: Dethard Peters, Adolf Schöner, Peter Friedrichs, Dietrich Stephani |
769 |
|
A Study on the Electrical Properties of ZnO Based Transparent TFTs Authors: Pedro Barquinha, Elvira Fortunato, Alexandra Gonçalves, Ana Pimentel, António Marques, Luís Pereira, Rodrigo Martins |
68 |
|
Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure Authors: Shiro Hino, Tomohiro Hatayama, Jun Kato, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu |
683 |
|
Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance Authors: Kenji Fukuda, Shinsuke Harada, Junji Senzaki, Mitsuo Okamoto, Yasunori Tanaka, Akimasa Kinoshita, Ryouji Kosugi, Kazu Kojima, Makoto Kato, Atsushi Shimozato, Kenji Suzuki, Yusuke Hayashi, Kazuto Takao, Tomohisa Kato, Shinichi Nishizawa, Tsutomu Yatsuo, Hajime Okumura, Hiromichi Ohashi, Kazuo Arai |
907 |
|
Challenges of High-Performance and High-Reliablity in SiC MOS Structures Authors: Junji Senzaki, Atsushi Shimozato, Kazutoshi Kojima, Tomohisa Kato, Yasunori Tanaka, Kenji Fukuda, Hajime Okumura |
703 |