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Articles by keyword: «Charge Trapping»

• Bistable Defects as the Cause for NBTI and RTN
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p473)
• Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiN_x:H Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p357)
• Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing
  Published in: Silicon Carbide and Related Materials 2011 (p1085)
• Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices
  Published in: Silicon Carbide and Related Materials 2011 (p461)
• Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
  Published in: Silicon Carbide and Related Materials 2009 (p983)
• Electrical Charge Injection/Ejection and Transport at Moderate Fields in Low-Density Polyethylene
  Published in: Advanced Materials Forum II (p442)
• Enhanced Surface Preparation Techniques for the Si/High-k Interface
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p11)
• Implications of Threshold-Voltage Instability on SiC DMOSFET Operation
  Published in: Silicon Carbide and Related Materials 2008 (p809)
• Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V
  Published in: Silicon Carbide and Related Materials 2010 (p366)
• Investigation of Drain Current Saturation in 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2006 (p811)
• Organic Materials for Active Layers in Transistors: Study of the Electrical Stability Properties
  Published in: Advanced Materials Forum III (p33)
• Process-Dependent Charges and Traps in Dielectrics on SiC
  Published in: Silicon Carbide and Related Materials 2005 (p995)
• Reduction of Charge Trapping Sites in Al₂O₃/SiO₂ Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices
  Published in: Silicon Carbide and Related Materials 2010 (p496)
• Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p1089)
• The Analysis of Space Charge Behavior in Nylon 11
  Published in: Cross-Disciplinary Applied Research in Materials Science and Technology (p507)