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Articles by keyword: «Chemical-Mechanical Planarization (CMP)»

• A 3D Numerical Study of the Polishing Behavior during an Oxide Chemical Mechanical Planarization Process
  Published in: Advances in Abrasive Technology VI (p433)
• Contamination and Cleaning of Oxide Areas Exposed During Copper CMP in Hydroxylamine Based Slurries
  Published in: Ultra Clean Processing of Silicon Surfaces V (p295)
• Electrical and Thermal Properties of Platinum Thin Films Prepared by DC Magnetron Sputtering for Micro-Heater of Microsensor Applications after CMP Process
  Published in: Advances in Nanomaterials and Processing (p267)
• Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature
  Published in: Advances in Nanomaterials and Processing (p263)
• Modified Double EWMA Approach for Mixed Product Run-to-Run CMP Process Control
  Published in: Advanced Manufacturing Technology (p2504)
• Physical and Chemical Characteristics of the Ceramic Conditioner in Chemical Mechanical Planarization
  Published in: Advances in Abrasive Technology V (p223)
• Slurry Preparation: A Key to Upgrade CMP Efficiency
  Published in: Manufacturing Processes and Systems (p19)
• Study on Pad Conditioning Parameters in Silicon Wafer CMP Process
  Published in: Advances in Grinding and Abrasive Technology XIV (p309)
• Study on the Mechanism of the Continuous Composite Electroplating Polishing for Silicon Wafer
  Published in: Advances in Machining & Manufacturing Technology VIII (p289)
• The Important Role of Oxidant in Copper Interconnection Chemical Mechanical Polishing for GLSI
  Published in: Optoelectronic Materials (p1111)
• The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries
  Published in: Silicon Carbide and Related Materials 2007 (p839)