Papers by Keyword: Compound Semiconductor

Abstract: In polar semiconductor materials, LO phonons produce a macroscopic electric field, which interacts with the electrons. This coupling of long range is known as Frohlich interaction. Due to the interaction of an electron with LO phonons, a quasi-particle is formed known as polaron. The strength of this coupling is expressed by a dimensionless Frohlich coupling constant. Due to the polar coupling to LO phonons, the carriers lose their initial kinetic energy to the lattice by a very efficient relaxation mechanism in III-V bulk semiconductors. Therefore it would be interesting to examine the effect of Frohlich coupling constant on the operational characteristics of optical parametric interaction in compound semiconductor medium. Using hydrodynamic model and coupled mode theory, a theoretical model is developed to determine threshold pump field for the onset of parametric process. For the sake of numerical estimations, data of ZnS and GaAs have been used. These prominent materials are assumed to be shined by a 10.6 μm CO₂ laser so that nonlinearity could be induced in the medium. It is found that material having lower coupling constant is beneficial for a cost effective parametric interaction. It is hoped that result of this paper may be useful for various industrial applications.

Abstract: CuInS₂ (CIS) is the promising candidate of an absorber layer of high efficiency thin film solar cells. The crystal quality of CIS is one of the important factors for high efficiency. A chemical doping approach using antimony and bismuth (Bi) is well known for improving crystal quality in Cu (In,Ga)Se₂ thin films. In this study, the effect of Bi doping on evaporated CIS thin films was investigated. A CIS thin film without Bi doping annealed at 600°C showed small crystal grain size of ~1 μm, which was smaller than the CIS film thickness of 2 μm. The small addition of 50 nm-thick Bi promoted crystal growth and large grain size of greater than 1 μm, which was comparable to the CIS film thickness, was realized. The CIS films without and with Bi addition had surface precipitates identified as Cu-S and Cu-Bi-S compounds, respectively. The crystal growth promotion by Bi addition can be attributed to that the Cu-Bi-S compound which has lower melting point of 470~490°C than that of the Cu-S compound of 507°C acted as flux for crystal growth.

Abstract: The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.

Abstract: Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using heterostructural compound semiconductors. Although the compound crystal growth techniques had reached at a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current from the metals to the semiconductors) was still on a trial-and-error basis. Our research efforts have been focused to develop, low resistance, refractory ohmic contact materials using the deposition and annealing techniques for n-GaAs, p-ZnSe, InP, p-SiC p-CdTe etc. It was found the growth of homo- or hetero–epitaxial intermediate semiconductor layers (ISL) was essential for low resistance contact formation. The importance of hetero-structural ISL was given taking an example of n-type ohmic contact for GaAs.