| Paper Title | Page |
|---|---|
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Authors: Sang Wook Park, Eun Chel Cho, Jae Hee Yu, Dea Won Kim |
923 |
|
Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data Authors: Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, G.C. Cardinali, Roberta Nipoti |
673 |
|
Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation Authors: A. Hürner, T. Schlegl, B. Adelmann, H. Mitlehner, R. Hellmann, A.J. Bauer, L. Frey |
773 |
|
Authors: Poornima Mittal, Y.S. Negi, R.K. Singh |
585 |
|
Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation Authors: Masashi Kato, Masaya Ichimura, Eisuke Arai |
933 |
|
Characterization of Contact Resistance between Carbon Nanotubes Film and Metal Electrodes Authors: Ki Bong Han, Yong Ho Choi |
238 |
|
Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films Authors: Marko J. Tadjer, Travis J. Anderson, Karl D. Hobart, Tatyana I. Feygelson, James E. Butler, Fritz J. Kub |
733 |
|
Authors: Roman Zagórski, Anna J. Dolata, Maciej Dyzia |
89 |
|
Authors: Sang Il Lee, Dong Jin Yoon, Joung Man Park |
1965 |
|
Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes Authors: Uwe Zimmermann, Anders Hallén, Bo Breitholtz |
1323 |