Papers by Keyword: Contact Stability

Abstract: The analysis of Ti/Ni metal-layer as Ohmic and Schottky contacts to 4H n-SiC (with a doping concentration of ~1E18 cm^-3) is reported. Both Ti (10nm/Ni (100nm) contact and Ti (20nm)/Ni (100nm) contact were found to have Ohmic behavior with comparable specific contact resistance (~4.3 to 5.3×10^-4 Ωcm²) after annealing at 1100 °C. Ti (10nm)/Ni (100nm) contact annealed at 500 °C and 600 °C was also demonstrated as Schottky contact to 4H n-SiC layers.

Abstract: The paper discussed the solar cells based on Cu-CdS contact assimilated to a heterojunction. Two methods were considered for our analysis: the rate equations approach and the stochastic equation one. The both permitted to obtain interesting information concerning the specific contact and are characterized by the order parameter.