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Articles by keyword: «Crystal Quality»

• An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2006 (p9)
• Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy
  Published in: Silicon Carbide and Related Materials 2003 (p633)
• Dislocation in 4H n⁺ SiC Substrates and their Relationship with Epilayer Defects
  Published in: Silicon Carbide and Related Materials 2006 (p247)
• GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation
  Published in: Silicon Carbide and Related Materials 2008 (p935)
• Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2006 (p25)
• Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1053)
• Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method
  Published in: Silicon Carbide and Related Materials 2008 (p7)
• Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes
  Published in: Semiconductor Photonics: Nano-Structured Materials and Devices (p17)
• Optically Transparent 6H-Silicon Carbide
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p53)
• Reduction of Macrodefects in Bulk SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p59)
• Seeded Growth of AlN on (0001)-Plane 6H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p983)
• The Growth and Characterization of 3C-SiC/SiNx/Si Structure
  Published in: Silicon Carbide and Related Materials - 1999 (p317)