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Articles by keyword: «Current-Voltage Characteristic»

• Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
  Published in: Silicon Carbide and Related Materials 2003 (p1133)
• Current Analysis of Ion Implanted p⁺/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient
  Published in: Silicon Carbide and Related Materials 2005 (p815)
• Current-Voltage Characteristic of C-RAM Nano-Cell-Element
  Published in: Nanoscience and Technology (p591)
• Current-Voltage Characteristics of Side-Gated Silicon Nanowire Transistor Fabricated by AFM Lithography
  Published in: Advanced Materials Research QiR 12 (p84)
• Electrical Characteristics and Microstructure of Composite of GdBa₂Cu₃O_7-δ and BaAl₂O₄
  Published in: Asian Ceramic Science for Electronics II and Electroceramics in Japan V (p307)
• Electron Transport and Heating in Semiconductors with One-Dimensional Superlattice
  Published in: Ultrafast Phenomena in Semiconductors (p257)
• Far Infrared Emission and Population Inversion of Hot Holes in MQW InGaAs/GaAs Heterostructures under Real Space Transfer
  Published in: Ultrafast Phenomena in Semiconductors (p261)
• Grain Boundary Structure and Electrical Properties in Nb-Doped SrTiO₃ Bicrystals
  Published in: Electroceramics in Japan III (p225)
• Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
  Published in: Silicon Carbide and Related Materials 2005 (p1537)
• High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
  Published in: Silicon Carbide and Related Materials 2003 (p1057)
• Microfabrication of Si Column Covered with SiC Film for Electron Emitter
  Published in: Silicon Carbide and Related Materials 2004 (p237)
• Modelling of the Current-Time Characteristics in Anodic Bonding
  Published in: 11th International Ceramics Congress (p1558)
• Modified Analytical Two-Dimensional Model for Planar GaAs MESFET Structure
  Published in: Contemporary Studies in Condensed Matter Physics (p211)
• On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p285)
• Spin-Dependent Quasiparticle Tunneling in Junction Superconductor-Isolator-Ferromagnetic
  Published in: EMMA-2000 (p529)