Papers by Keyword: D-Band Luminescence

Abstract: The influence of GBs contained in the channel of MOS-FETs - fabricated in thin SOI layers - is demonstrated. The drain current measured at room temperature increases about 50 times for nFETs and about 10 times for pFETs, respectively, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.

Abstract: There is a growing demand for a silicon-based light emitters generating a light with a wavelength in of 1.3-1.6 μm range, which can be integrated into silicon chips and used for in-chip opto-electronic interconnects. Among other possibilities, the D1 luminescence at about 1.55 m, caused by dislocations in Si, can be a suitable candidate for such in-chip light emitters. Here we present a brief review of today knowledge about electronic properties of dislocations in silicon and dislocation-related luminescence in connection with possible application of this luminescence for silicon infrared light-emitting diodes (Si-LEDs).