| Paper Title | Page |
|---|---|
|
A Deep Erbium-Related Bandgap State in 4H Silicon Carbide Authors: G. Pasold, F. Albrecht, Joachim Grillenberger, Ulrike Grossner, C. Hülsen, R. Sielemann, W. Witthuhn |
487 |
|
A Sharp Defect-Annealing Stage Below Room Temperature in Irradiated N-Type Indium Phosphide Authors: A. Canimoglu, D.W. Palmer |
837 |
|
A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen Authors: Fredrik Allerstam, Einar Ö. Sveinbjörnsson |
755 |
|
A Study of the Copper-Pair Related Centers in Silicon Authors: Andrei A. Istratov, T. Heiser, H. Hieslmair, C. Flink, Joachim Krüger, Eicke R. Weber |
467 |
|
Authors: Eugene B. Yakimov, Olga V. Feklisova, Maurizio Acciarri, Anna Cavallini, Sergio Pizzini |
327 |
|
Alpha Radiation-Induced Deep Levels in p-InP Authors: Aurangzeb Khan, Umar S. Qurashi, N. Zafar, M. Zafar Iqbal, Armin Dadgar, D. Bimberg |
843 |
|
Analysis of Radiation-Induced Defects in InGaP Materials and Solar Cells Authors: Aurangzeb Khan |
107 |
|
Authors: E. van Wyk, A.W.R. Leitch |
697 |
|
Authors: K. Kobayashi, H. Ohyama, K. Hayama, Y. Takami, Eddy Simoen, A. Poyai, C. Claeys, A. Mohammadzadeh, S. Kohiki |
357 |
|
Au-Related Deep States in the Presence of Extended Defects in N-Type Silicon Authors: M. Kaniewska, J. Kaniewski, Anthony R. Peaker |
1511 |