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Articles by keyword: «DLTS»

• A Deep Erbium-Related Bandgap State in 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p487)
• A Sharp Defect-Annealing Stage Below Room Temperature in Irradiated N-Type Indium Phosphide
  Published in: Defects in Semiconductors 19 (p837)
• A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂ Interface and Their Passivation by Hydrogen
  Published in: Silicon Carbide and Related Materials 2007 (p755)
• A Study of the Copper-Pair Related Centers in Silicon
  Published in: Defects in Semiconductors 19 (p467)
• About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800°C Range
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p327)
• Alpha Radiation-Induced Deep Levels in p-InP
  Published in: Defects in Semiconductors 19 (p843)
• Analysis of Radiation-Induced Defects in InGaP Materials and Solar Cells
  Published in: Defects and Diffusion in Semiconductors IV (p107)
• As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p697)
• Assessment of Radiation Induced Lattice Defects in Shallow Trench Isolation Diodes Irradiated by Neutron
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p357)
• Au-Related Deep States in the Presence of Extended Defects in N-Type Silicon
  Published in: Defects in Semiconductors 17 (p1511)
• Band Gap States of Cr in the Lower Part of the SiC Band Gap
  Published in: Silicon Carbide and Related Materials 2000 (p471)
• Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p313)
• Cadmium-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification
  Published in: Defects in Semiconductors 19 (p423)
• Capacitance Spectroscopy of Deep Centres in SiC
  Published in: Defects in Semiconductors 19 (p715)
• Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p365)