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Articles by keyword: «Deep-Level Transient Spectroscopy»

• Deep Level Transient Spectroscopic Analysis of Annealing Process of Iron Ion Implanted Gallium Arsenide
  Published in: Diffusion in Materials - DIMAT 1992 (p995)
• Defect Identification with Positrons
  Published in: Positron Annihilation - ICPA-12 (p25)
• Donor-Related Deep Levels in In_1-xGa_xAsP_1-y
  Published in: Diffusion in GaAs and other III-V Semiconductors (p83)
• Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p537)
• Intra-Grain Defects - Limiting Factor for Low-Temperature Polycrystalline Silicon Films?
  Published in: Polycrystalline Semiconductors VI (p95)
• Low-Temperature Diffusion of Hydrogen and the Roles of Defects in Silicon
  Published in: Diffusion in Materials - DIMAT 1992 (p1001)
• On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures
  Published in: Silicon Carbide and Related Materials 2001 (p1005)
• Oxygen-Related Defect Centers in 4H Silicon Carbide
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p553)
• Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p489)
• Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p489)
• Spectroscopic Studies of Iron and Chromium in Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p285)
• Substitutional Gettering of Platinum by Diffusion into Ion-Beam Damaged Silicon
  Published in: Defects in Semiconductors 18 (p1985)