Papers by Keyword: Deep-Level Transient Spectroscopy

Abstract: Etching active area by dry etching method can precisely control the length and width of the devices, but it may damage the SiC surface. In this paper, we fabricated metal-oxide-semiconductor capacitors (MOSC) using different etching methods to compare the effect of etching methods on the SiO₂/SiC interface and dielectric breakdown. It is observed that dry etching will degrade the surface roughness of SiC and the interface state density at the SiO₂/SiC interface. Post-oxidation NO annealing cannot passivate the interface effectively. The breakdown field of gate oxide on the dry etched sample is also degraded. These results indicate that dry etching of SiC surface should be avoided when fabricating MOS devices.

Abstract: Formation and annealing behavior of the 1.014-eV copper center and its dissociation product (center) in silicon are characterized by photoluminescence (PL) and deep-level transient spectroscopy (DLTS) measurements. On the basis of the findings reported in this study, the structures of the centers are discussed.

Abstract: We report on the electronic properties of Fe and Cr in n-type germanium using conventional and Laplace DLTS techniques, which in the case of Schottky barriers, are restricted to levels located in the upper half of the band gap. In this work we present extensive DLTS and Laplace DLTS results, re-examining various basic properties of Fe and Cr in n-type Ge samples. In addition our analysis bring new insights into the microscopic behavior of these two chemical species such as their interactions with hydrogen present as an unwanted contaminant, giving rise to the generation of other related levels in the band gap.

Abstract: Electrical transport and traps in vertical SiGe/Si QW structures of low background doping level are studied in the presented report. Temperature activation of holes from the quantum well was found to determine the vertical current through Si/SiGe/Si structures at T > 160 K. At lower temperatures (T < 130 K), the current mechanism is attributed to a thermally activated tunneling of holes from quantum well. Deep traps are observed in the Si/SiGe/Si structures in high concentration (1011 – 1012 cm-2). Traps are most likely assistance in the current in the vertical Si/SiGe/Si structures as recombination centers near the QW.