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Articles by keyword: «Deep Level»

• 4H-SiC (11-20) Epitaxial Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p189)
• A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p1651)
• A Deep Erbium-Related Bandgap State in 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p487)
• A New Type of Metastability due to Donors in GaAs
  Published in: Defects in Semiconductors 18 (p1025)
• Application of High Energy Ion Beams for Local Lifetime Control in Silicon
  Published in: Materials Science Applications of Ion Beam Techniques (p225)
• As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p365)
• Band Gap States of Cr in the Lower Part of the SiC Band Gap
  Published in: Silicon Carbide and Related Materials 2000 (p471)
• Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p435)
• Carrier Removal in Electron Irradiated 4H and 6H SiC
  Published in: Silicon Carbide and Related Materials 2007 (p425)
• Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2008 (p381)
• Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p481)
• Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation
  Published in: Silicon Carbide and Related Materials 2001 (p597)
• Characterization of SiC Wafers by Photoluminescence Mapping
  Published in: Silicon Carbide and Related Materials 2005 (p711)
• Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
  Published in: Defects in Semiconductors 17 (p1013)
• Co-Germanide Schottky Contacts on Ge
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p107)