HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «Deep Level Transient Spectroscopy»

• Microstructural and Electrical Properties of NiSi₂ Precipitates at Dislocations in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p447)
• A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p367)
• A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation
  Published in: Silicon Carbide and Related Materials 2009 (p431)
• Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons
  Published in: Silicon Carbide and Related Materials 2009 (p439)
• Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p455)
• Defect Engineering in Impurity-Free Disordered (Al)GaAs for Optoelectronic Devices Application
  Published in: Defects and Diffusion in Semiconductors - An Annual Retrospective VII (p233)
• Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2003 (p1081)
• Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials - 2002 (p459)
• Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing
  Published in: Polycrystalline Semiconductors V (p39)
• Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs
  Published in: Defects in Semiconductors 18 (p1067)
• Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD
  Published in: Silicon Carbide and Related Materials - 2002 (p161)
• Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p991)
• Impurity Effect on the Dislocation DLTS Spectrum in Silicon
  Published in: Polycrystalline Semiconductors V (p27)
• Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
  Published in: Silicon Carbide and Related Materials 2003 (p791)
• Investigation of the Defect Distribution in Polycrystalline Silicon
  Published in: Polycrystalline Semiconductors III (p243)