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Papers by Keyword: Defect

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Sub-μm Scale Photoluminescence Image of SiC and GaN at a Low Temperature

Authors: Masahiro Yoshimoto, Motoki Goto, Junji Saraie, Tsunenobu Kimoto, Hiroyuki Matsunami

627

Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

Authors: Evgenia V. Kalinina, A.S. Zubrilov, N.I. Kuznetsov, Irina P. Nikitina, Alla S. Tregubova, M.P. Shcheglov, V.Ya. Bratus

497

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes

Authors: C.M. Schnabel, M. Tabib-Azar, Philip G. Neudeck, S.G. Bailey, H.B. Su, Michael Dudley, R.P. Raffaelle

489

Characterization of SiC using Synchrotron White Beam X-ray Topography

Authors: Michael Dudley, X. Huang

431

4H-SiC Device Scaling Development on Repaired Micropipe Substrates

Authors: T.E. Schattner, Jeff B. Casady, M.C.D. Smith, Michael S. Mazzola, Vladimir Dmitriev, S.V. Rentakova, Stephen E. Saddow

1203

In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography

Authors: Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Yukio Takano, Shin Ichi Nishizawa, Kazuo Arai

457

Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal

Authors: Tomohisa Kato, Hitoshi Ohsato, Takashi Okuda

449

Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method

Authors: Sohei Okada, Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino

Progress in SiC Bulk Growth

Authors: Mikhail Anikin, O. Chaix-Pluchery, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Philippe Grosse, Christian Faure, Y. Grange, Gérard Basset, Cécile Moulin, Roland Madar

Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications

Authors: H. McD. Hobgood, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Valeri F. Tsvetkov, Calvin H. Carter Jr.