Papers by Keyword: Defect Formation

Abstract: Based on the analysis of the defect formation in silicon carbide polytypes in different semiconductor manufacturing processing steps, device operation and environmental-device interaction it is concluded that external material and energy fluxes are generally able to destabilize the polytype structure. The governing reason is the formation of stacking faults and instabilities of the partial dislocation associated with them. A new ansatz is proposed to describe the structural instabilities using none-equilibrium thermodynamics and the entropy production. A criterial form for polyype transitions is proposed. The developed criterial form is applied to describe observed structural instabilities occur­ring under different external actions.

Abstract: This study provides a comprehensive investigation into the effects of different scanning parameter combinations—specifically scanning speed and hatch distance—on the material properties of IN939 fabricated using the powder bed fusion-laser beam (PBF-LB) process under a constant volumetric energy density (VED). Despite the fixed VED, the fabricated samples experienced different thermal cycles, resulting in distinct microstructural features and corresponding variations in material performance. In-situ infrared monitoring indicated that the sample with the narrowest hatch distance and highest scanning speed (Sample 1) reached the highest normalized temperatures with intense heat accumulation, whereas wider hatch distances (Sample 3) promoted lower and more stable temperature distributions. The results revealed that the intermediate parameter set (Sample 2) achieved the highest relative density (99.29%) and the lowest surface roughness. In contrast, both the narrowest and widest hatch spacing combinations promoted increased porosity, primarily consisting of lack-of-fusion (LoF) and gas pores. Electron backscatter diffraction (EBSD) analysis showed that the area-weighted average grain size increased from 29.5 µm to 36.7 µm as the hatch distance increased. Texture analysis indicated generally weak crystallographic texture development, with only slight intensification of <001>//BD and <111>//BD components, attributed to the 67^o rotation strategy. Furthermore, the microhardness values demonstrated negligible variation across the samples, ranging from 356.7 ± 14.3 HV1 to 360.1 ± 10.5 HV1. This limited variation indicates that the strengthening behavior was predominantly governed by the combined influence of defect density and matrix–defect interactions, rather than being directly correlated with grain size.

Abstract: Developed a mathematical model, which makes it possible to optimize, from the point of view of defect formation, the parameters of stress concentration in a deformable elastic body of the materials being processed, destruction is considered as a method for creating defects at a submicroscopic level in various media. Getting expressions of conformal reflection of single circle on an arbitrary area, using a conformal reflection and transformation of Laplace, it is possible to design behavior of a tensely deformed state of solid at the arbitrary loading.

Abstract: The method to attach seed to crucible lid as well as seed quality is very important for obtaining high quality crystals. Therefore, modified seeding method was developed for improving adhesive layer between seed and graphite crucible lid. SiC single crystal grown with modified seeding method definitely exhibited lower micropipe density (MPD) and lower full width at half maximum (FWHM) values comparing with values from conventional seeding method. Etch pit density of SiC crystal was successfully decreased with using the modified seeding method.

Abstract: Low temperature photoluminescence (PL) of high-resistivity detector-grade Cl-compensated CdTe semiconductor crystals subjected to irradiation with nanosecond (τ = 7 ns) laser pulses of the second harmonic (λ = 532 nm) of a YAG:Nd laser is studied. Irradiation of CdTe crystals within the certain range of laser pulse energy densities results in a relative decrease in the emission intensity in both the deep energy level and edge regions and an increase in the exciton band intensity in the PL spectra. The evolution of the PL spectra depending on laser energy density, excitation level and temperature under excitation are analyzed. Laser-stimulated transformation of the point defect structure of the CdTe surface region and mechanisms of laser-induced defect formation are discussed. The optimal regimes of laser processing have been obtained which result in the minimum ratio of the defect and exciton bands that is an evidence of an increase in the structural perfection of the irradiated crystals.

Abstract: Defect formation during the initial stage of physical vapor transport (PVT) growth in the [000-1] and [11-20] directions has been investigated by x-ray reciprocal space mapping (RSM) and defect-selective etching. RSM studies showed that, while the crystal grown in the [000-1] direction did not show a significant degradation of the crystalline quality during the initial stage of growth, the growth in the [11-20] direction resulted in misoriented subgrain structure near the grown crystal/seed interface. The cause of the domain formation is assumed to be the difference in nitrogen concentration between the seed and the grown crystal, and the results indicate that the growth in the [11-20] direction is greatly affected by the nitrogen doping difference.

Abstract: The structural defects in the single 6H-SiC crystals grown by the PVT method have been studied by the scanning electron microscopy, Raman scattering and photoluminescence techniques. The formation mechanism of the defects, micropipes and parasitic polytypes 4H and 15R, observed in the single 6H-SiC crystal has been proposed.

Abstract: This paper reports the effects of processing parameters on defects formed during friction stir processing of 6082-T6 Aluminium Alloy. The plates were processed by varying the feed rate between 50 and 250 mm/min, while the rotational speed was varied between 1500 and 3500 rpm to achieve the best result. It was observed that the sheets processed at the highest feed rate considered in this research resulted in wormhole defect. These processed samples with defects were correlated to the tensile results and it was found that the Ultimate Tensile Strength (UTS) of these samples was relatively low compared to other samples without defects.

Abstract: Components of navigating devices can be affected by acoustic emission and vibration. Therefore prototype samples and electronic components must be tested in such conditions. Heterostructures, which destructed under the action of external physical factors and kinetics of formations of porous defects in silicon substrates, were analyzed.

Abstract: The recovery of the boron implantation damage can be very difficult. Depending on the energy and the dose many dislocations are generated at the projected range of the boron implantation. The morphology of these dislocations depends on the silicon substrate. In this work we demonstrate that the interstitial oxygen concentration ([Oi]) is related with the dislocation dimension, density end morphology. Particularly long dislocation dipoles were generated by the boron implantation in substrate with interstitial oxygen, and their density is connected with the [Oi] concentration.