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Articles by keyword: «Defect Formation»

• Analysis of Strain and Defect Formation of Low-Dimensional Structures in SiC
  Published in: Silicon Carbide and Related Materials 2000 (p259)
• Defect Formation in Twin Roll-Cast AA 3xxx and 5xxx Series Aluminium Alloys
  Published in: Aluminium Alloys 2002 - ICAA8 (p89)
• Defect Types and Diffusion Mechanism in FeAl Compounds - A Positron Annihilation Study
  Published in: Diffusion in Materials DIMAT 1996 (p239)
• F-Center Formation by K-Shell Excitation in KBr, RbCI and KI
  Published in: Defects in Insulating Materials (p587)
• Growth and Defect Formation in Thin Ge and Si_0.8Ge_0.2 Layers Ion Beam Sputter Deposited on Si(001)
  Published in: Polycrystalline Semiconductors IV (p193)
• Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology
  Published in: Defects in Semiconductors 19 (p1801)
• Large-Scale Atomic Displacement Induced by Electronic Excitaion
  Published in: Defects in Insulating Materials (p509)
• Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance
  Published in: Silicon Carbide and Related Materials 2000 (p505)
• Relaxation Processes and Self-Trapping of Excitons in Rare Gas Solids
  Published in: Defects in Insulating Materials (p517)
• Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process
  Published in: Silicon Carbide and Related Materials - 1999 (p1515)
• Simulations of Defect Formation Processes in Hydrogenated Amorphous Silicon
  Published in: Hydrogenated Amorphous Silicon (p723)
• Teh Effect of Boron Concentration upon Defect Formation after Laser Thermal Processing using Molecular Dynamics
  Published in: Defects and Diffusion in Semiconductors (p71)
• The Mechanism of Defects Formation in Silicon Substrates
  Published in: Mechatronic Systems and Materials: Materials Production Technologies (p7)
• The Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation Damage
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p269)
• Utility of Relatively Simple Models for Understanding Process Parameter Effects on FSW
  Published in: THERMEC'2003 (p2959)