Papers by Keyword: Device Performance

Abstract: This paper presents a comparison of the density of performance-degrading near-interface traps (NITs) in the most commonly available 1200 V commercial N-channel SiC power metal–oxide–semiconductor field-effect transistors (MOSFETs). A recently developed integrated-charge technique was used to measure the density of NITs with energy levels aligned to the conduction band, which degrade MOSFET’s performance by capturing and releasing electrons from the channel biased in the strong-inversion condition. Trench MOSFETs of one manufacturer have lower densities of these NITs in comparison to MOSFETs with the planar gate structure, corresponding to observed higher channel-carrier mobility in trench MOSFETs. Different response-time distributions were also observed, corresponding to different spatial location of the measured NITs.

Abstract: In this paper for the first time, the performance of Dielectric Engineered Tunnel Field Effect Transistors (DE-TFETs) is evaluated on the InGaAs channel. Two DE-TFETs based on gate-dielectric structures, namely, Device-A and Device-B are modeled and characterized for both n-type and p-type operations to attain low subthreshold slope (SS) and drain induced barrier lowering (DIBL) using La₂O₃ as high-k gate dielectric. A structural modification of Device-B is illustrated that improves the on-state current (I_on), SS, and DIBL. Then, performance of both devices are analyzed based on physical oxide thickness (T_ox). The simulation results show that the modified Device-B has the lowest SS of 15.31 mV/dec and 54.64 mV/dec, I_on/I_off ratio of ~10⁹ and ~10⁶ with off-state current (I_off) of ~10^-15 A/µm and ~10^-12 A/µm for n-DE-TFET and p-DE-TFET, respectively. Furthermore, the performance parameters of both devices are studied for digital and analog applications and it is found that the modified Device-B can be a potential candidate for future digital applications due to its low power dissipation of 13.55 µW/µm and 27.56 µW/µm for n-DE-TFET and p-DE-TFET, respectively. On the other hand, Device-A shows high transconductance (g_m) of 722.52 µS/µm and 424.3 µS/µm and cut-off frequency (f_T) of 211.95 GHz and 290.86 GHz for n-DE-TFET and p-DE-TFET, respectively, and can be a viable candidate for future low power analog applications.

Abstract: With the method of vacuum dc sputtering and vacuum evaporation,the green light double organic light-emitting devices (OLED) of ITO/CuPc/Alq3 / Al structure were prepared, the electrical characteristics and electroluminescent properties of the device were measured. Devices show good luminous performance, light intensity reaches 600000 cps, when the wavelength of luminescence spectrum is 510 nm, luminance is 2641I/a.u.

Abstract: Based on the analysis of the equivalent circuit model of organic photovoltaic (OPV) cells, the explicit expression of current, short-circuit current and open-circuit voltage was obtained by means of W-function, and the effects of internal resistances and diode quality factor on the output characteristics of OPV cells were studied. The results demonstrate that the series resistance can effect short-circuit current but not open-circuit voltage, and the shunt resistance and diode quality factor can influence open-circuit voltage but short-circuit current unchanged. The decrease in series resistance and the increase in shunt resistance and diode quality factor can enhance the fill factor and energy conversion efficiency of OPV cells. This conclusion is essential in preparing OPV cells and improving device performance.

Abstract: In order to study the influence of the structural and operating parameters on device performance of the self-excited pulsed jet in low-press and Amount-flux, a great deal of experiments on structural and operating parameters of the self-excited pulsed jet was carried out by independently developed testing system. Under the certain upper nozzle diameter and cavity diameter, the changes of the lower nozzle diameter and cavity length and working pressure have an effect on the hitting power of the pulsing jet and pulsing effect. Experimental results showed that for the different lower nozzle diameter and under each working pressure the influence of the cavity length changes on the hitting power is different, there is the optimal range of cavity length and working pressure while the lower diameter is fixed, and with the increase of the lower nozzle diameter, the range of the optimal cavity length and working pressure also has a gradually increasing trend.

Abstract: To find out the effect mechanism of technological parameters on the performance of fiber coupler, the relationship between the technological parameters and the optical performance is investigated by using a six-axes optical fiber coupler machine as experimental setup. It is discovered that the technological parameters such as drawing speed and fused temperature have a great effect on optical performance of fibre coupler. The fused region and taper region of fiber coupler are tested with scanning electron microscope (SEM). It is discovered that there are crystalline grains in the fused region. And the crystalline grains decrease while drawing speed increase. In the taper region, there are micro cracks. And the cracks are more obvious while drawing speed increases. When the fused temperature is above some point (here is 1350
), the micro cracks in the taper region disappear and the optical performance of fiber coupler is the highest at this time.