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Articles by keyword: «Device Simulation»

• Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer
  Published in: Silicon Carbide and Related Materials 2008 (p675)
• Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
  Published in: Silicon Carbide and Related Materials 2011 (p371)
• Current Gain Dependence on Emitter Width in 4H-SiC BJTs
  Published in: Silicon Carbide and Related Materials 2005 (p1425)
• Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States
  Published in: Silicon Carbide and Related Materials 2004 (p889)
• Device Simulation Model for Transient Analysis of SiC-SBD
  Published in: Silicon Carbide and Related Materials 2007 (p975)
• Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication
  Published in: Silicon Carbide and Related Materials 2004 (p809)
• Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination
  Published in: Silicon Carbide and Related Materials - 2002 (p879)
• Hot Electron Induced Current Collapse in AlGaN/GaN HEMTs
  Published in: Silicon Carbide and Related Materials 2006 (p1035)
• Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate
  Published in: Silicon Carbide and Related Materials 2006 (p803)
• Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure
  Published in: Silicon Carbide and Related Materials 2006 (p815)
• OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
  Published in: Silicon Carbide and Related Materials 2011 (p545)
• Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices
  Published in: Silicon Carbide and Related Materials 2009 (p1041)
• Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices
  Published in: Silicon Carbide and Related Materials 2005 (p1179)
• Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias
  Published in: Silicon Carbide and Related Materials 2001 (p1153)
• Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)
  Published in: Silicon Carbide and Related Materials 2004 (p921)