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Articles by keyword: «Diffusion Length»

• 4H-SiC High Temperature Spectrometers
  Published in: Silicon Carbide and Related Materials 2006 (p941)
• A Simple Method to Extract the Diffusion Length from the Output Parameters of Solar Cells - Application to Polycrystalline Silicon
  Published in: Polycrystalline Semiconductors VII (p399)
• About a Novel Gettering Procedure for Multicrystalline Silicon Samples
  Published in: Polycrystalline Semiconductors IV (p485)
• An Express Method for the Study of Planar Homogeneity of Diffusion Lenght in Multicrystalline Solar Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p449)
• Analysis of Electron-Beam Crystallized Large Grained Si Films on Glass Substrate by EBIC, EBSD and PL
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p116)
• Analysis of Minority Carrier Diffusion in the Presence of a Dislocation Array: Effective Diffusion Length, Luminescence Efficiency and Dark Current
  Published in: Beam Injection Assessment of Defects in Semiconductors (p45)
• Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p489)
• Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
  Published in: Silicon Carbide and Related Materials 2008 (p857)
• EBIC Investigation of the Influence of Hydrogen Passivation on Thin-Film Polycrystalline Silicon Solar Cells Obtained by Aluminium Induced Crystallization and Epitaxy
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p413)
• Effective Diffusion Length of Multicrystalline Solar Cells
  Published in: Polycrystalline Semiconductors V (p75)
• Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p143)
• Electrical Properties of SiGe Epitaxial Layers for Photovoltaic Application as Studied by Scanning Electron Microscopical Methods
  Published in: Beam Injection Assessment of Defects in Semiconductors (p509)
• Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p777)
• Electron-Beam Induced Current Profiles for Thin Film Heterojunction Analysis
  Published in: Polycrystalline Semiconductors IV (p527)
• Epitaxial 6H-SiC Layers as Detectors of Nuclear Particles
  Published in: Silicon Carbide and Related Materials - 1999 (p1447)