Papers by Keyword: Dimensionality

Abstract: Heusler alloys are intermetallic compounds formed in two combinations: Full-Heusler (X₂YZ) and Half-Heusler (XYZ). X and Y can be any transition element, and Z belongs to the main group. This shows that there can be a huge variation in the combinations, leading to various properties and applications. We aimed at predicting the combination leading to shape memory properties using machine learning tools and then synthesizing the same. The predictions are done by training the tool with input data. We employed the lattice strain, valence electron concentration ratio, mechanical stress, difference in entropy, and saturation magnetization as input features. The correlation between the martensitic and austenitic temperature was evaluated in terms of regression metrics. The random forest and decision tree modeling were executed. Test scores were obtained using frequency ordering, PCA, linear regression, and correlation matrix to forecast magnetically controlled shape memory effect. The silhouette score matched the transition temperature at which the material showed shape memory behavior. Additionally, from 70% of the training data, a combination of Iron (Fe), Nickel (Ni), and Aluminum (Al) as Full Heusler alloys stimulated the algorithms in gaining the accuracy of predictive modeling by minimizing the error. Through DFT-based bandgap and density of states calculations, the Fe₂NiAl Heusler compound is hypothesized to behave as a half-metallic ferromagnet by considering the atomic number, the number of valence electrons, and the local magnetic moment. The experimental validation will be done along with magnetization studies, magneto-transport, and magneto-caloric measurements.

Abstract: Moores law predicts the reduction of the device elements size and the advancement of physics with time for the next generation microelectronic industries. Materials and devices sizes and enriched physics are strongly correlated phenomena. Everyday physics moves a step forward from microscale classical physics toward nanoscale quantum phenomenon. Similarly, the vast micro/nanoelectronics needs advancement in growth and characterization techniques and unexplored physics to cope with the 21^st century market demands. The continuous size reduction of devices stimulates the researchers and technocrats to work on nanomaterials and devices for the next generation technology. The semiconductor industry is also facing the problem of size limitation and has followed Moores law which predicts 16 nm nodes for next generation microelectronic industries. Nanometer is known as the 10 times of an Angstrom unit, where it is common consensus among the scientists that any materials and devices having physical dimensions less than 1000 times of an Angstrom will come under the umbrella of Nanotechnology. This review article focuses on the fundamental aspects of nanoscale materials and devices: (i) definitions and different categories of nanomaterials, (ii) quantum scale physics and technology, (iii) self-assembed nanostructures, (iv) growth conditions and techniques of 0D, 1D, 2D, and 3D dimensional materials, (v) understanding of the multifunctionalities of the nanomaterials, (vi) nanoscale devices for low energy consumption and fast response, (vii) integration of nanoscale materials with Si-based systems, and (viii) major technical challenges.

Abstract: Methods to analysis the DOF(degree of freedom) and singularity of pure serial and pure parallel manipulator, which can not be used to the hybrid manipulator directly, three type of practical topological units and one type of virtual topological unit adopted, Synthesis method of topological dimensionality of the spatial mobility of each topological unit integrated together, architectures of serial-paralle mechanism discussed, also the formula and process of its topological dimensionality of spatial mobility presented, singularity analysis of hybrid mechanism can be carried out based on the forgoing results.

Abstract: Methods to analysis the DOF(degree of freedom) and singularity of pure serial and pure parallel manipulator, which can not be used to the serial-parallel manipulator directly, three type of practical topological units and one type of virtual topological unit adopted, Synthesis method of topological dimensionality of the spatial mobility of each topological unit integrated together, architectures of serial-paralle mechanism discussed, also the formula and process of its topological dimensionality of spatial mobility presented, singularity analysis of serial-parallel mechanism can be carried out based on the forgoing results.