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Articles by keyword: «Diode»

• 100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches used in an All-SiC PWM Inverter
  Published in: Silicon Carbide and Related Materials - 1999 (p1403)
• 4H-SiC Device Scaling Development on Repaired Micropipe Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p1203)
• 600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications
  Published in: Silicon Carbide and Related Materials 2007 (p1251)
• Advances in SiC Materials and Technology for Schottky Diode Applications
  Published in: Silicon Carbide and Related Materials 2001 (p1119)
• Characteristics of n-p Junction Diodes made by Double-Implantations into SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p925)
• Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p1003)
• Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
  Published in: Silicon Carbide and Related Materials - 1999 (p1331)
• C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes
  Published in: Silicon Carbide and Related Materials 2008 (p469)
• Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination
  Published in: Silicon Carbide and Related Materials 2000 (p687)
• Design of an Integrated SiC JFET Power Switch and Flyback Diode
  Published in: Silicon Carbide and Related Materials 2011 (p1041)
• Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
  Published in: Silicon Carbide and Related Materials 2008 (p655)
• Effects of Trapping in a-Si:H Diodes
  Published in: Hydrogenated Amorphous Silicon (p957)
• Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p1285)
• Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices
  Published in: Silicon Carbide and Related Materials - 1999 (p1161)
• Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
  Published in: Silicon Carbide and Related Materials 2007 (p353)