Keyword: "Dislocation"
Papers by keyword:
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Paper Title Page

Creep Strain Behavior in Transient Region and Minimum Creep Rate of Tempered Martensitic 9%Cr Steel

| Authors: Fujio Abe

47

Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in Silicon

Authors: Michael Seibt, Vitaly V. Kveder

447

100 mm 4HN-SiC Wafers with Zero Micropipe Density

Authors: R.T. Leonard, Y. Khlebnikov, Adrian R. Powell, C. Basceri, M.F. Brady, I. Khlebnikov, Jason R. Jenny, D.P. Malta, Michael J. Paisley, Valeri F. Tsvetkov, R. Zilli, E. Deyneka, H.McD. Hobgood, Vijay Balakrishna, Calvin H. Carter Jr.

7

1D Properties of Straight Dislocation Segments in Si and Ge

Authors: E.A. Steinman

537

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

Authors: Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga

93

3D Simulation of Dislocation Motion on a Lattice: Application to the Yield Surface of Single Crystals

Authors: G.R. Canova, Yves Bréchet, L.B. Kubin, Benoit Devincre, Vassilis Pontikis, M. Condat

101

3-D Simulations of Dislocations and Plasticity

Authors: Ladislas P. Kubin, Benoit Devincre, G.R. Canova, Yves Bréchet

217

3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method

Authors: Y. Yanagisawa, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

423

4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions

Authors: Birgit Kallinger, Bernd Thomas, Patrick Berwian, Jochen Friedrich, Gerd Trachta, Arnd Dietrich Weber

55

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction

Authors: Matthias Stockmeier, Rainer Hock, Octavian Filip, Boris M. Epelbaum, Albrecht Winnacker, Andreas Magerl

219

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