Papers by Keyword: Dislocations

Abstract: The performance and reliability of silicon carbide (SiC) devices are critically dependent on the quality of epitaxial layers which in turn are influenced by substrate properties. The accurate classification of epitaxial defects coming from substrate crystal defects and surface defects is critical since these can adversely affect device performance. In this paper, two new methods of defect characterization in substrates and epitaxial layers are presented utilizing photoluminescence (PL) spectrum and carrier lifetime. These methods can be used to study the evolution of defects from substrates to epi and to better predict Epi yields.

Abstract: Results from optical defect inspections, and X-ray topography, on wafers from entire 4H-SiC ingots provide a clear visualization on the positional dependance of bulk inclusions in ingots with respect to growth stages, looking to both density and size. It is also clear while studying the superpositioning of Laue–Bragg interference densities that the different categories of said defectivity generate new crystallographic defects, dislocations. These in turn lead to significant reductions in usability of wafers, and the lack of tracing such defects, cause an increased difficulty to predict the final device yield, as is displayed by growing epitaxial layers on materials heavily affected by bulk inclusions.

Abstract: Phase components of experimental low cost titanium alloys, their substructure and parameters, dislocation structure, features of phase formation in the metal, which differ in alloying systems, were studied using complex research methods. The stoichiometric composition of dispersed phases in the internal volumes of alloy grains was determined by diffraction patterns using transmission electron microscopy. It is shown that in the structure of titanium alloy Ti-2,8Al-5,1Mo-4,9Fe there are dispersed nanoparticles of intermetallic phases of different morphology and stoichiometric composition. These are the phases: Ti₃Al and Fe₂Ti with a size of 10…40 nm; Mo₉Ti₄ - 20…120 nm. Studies of titanium alloy Ti-1,5Fe-O showed the presence in the structure of mainly nanoparticles of oxides: Ti₃O₅ size 10…30 nm and Ti₄Fe₂O, FeTiO₅ (10…90 nm), as well as intermetallics Fe₂Ti (10…40 nm). It is established that the formation of nanoparticles of intermetallic and oxide phases in the thin plate structure of the investigated experimental low cost titanium alloys promotes the formation of the substructure with uniform distribution of dislocation density. This provides a high level of mechanical properties of alloys.

Abstract: The standard textbook analysis of dislocations is generally limited to the case of infinitely straight screw or edge dislocations, which do not exist. This is due to the complexity of the formulas for arbitrary dislocation loops, i.e., Burger’s equation for the displacement field, the Peach-Köhler equation for the stress field and Blin’s equation for the interaction energy, which involve line integrals along the dislocation loop. The integrands are complex, and integration often involves non-elementary functions. Elaboration of the integrands with symbolic mathematical software produces tensor formulas which can be reused at will. By formulating convenient parametric expressions for the configuration studied and using superposition, mathematical software can be used to perform the integrations for arbitrary Burgers vectors. Often, the resulting expressions for the tensorial fields are very long, but they can be easily incorporated as user-defined formulas for plotting, parametric analysis, and incorporation into routines for energy minimisation or the non-linear equations for force equilibrium. The effectiveness of this approach will be illustrated by the example of short straight dislocations, circular dislocations, the interaction between a pileup and dissociated dislocations in the grain boundary, and the nucleation of dislocations at grain boundaries.

Abstract: A highly efficient, high-voltage power switching technology, the Optical Transconductance Varistor (OTV) is being developed based on the photoconductive property of 6H-SiC. The behavior of the dislocations in 6H-SiC under the application of voltage and laser in such devices is of particular interest. In this study, both ex-situ and in-situ synchrotron X-ray topography were applied to characterize dislocations and investigate their behaviors when the sample was electrically and photonically stressed. Threading dislocations (TDs) and basal plane dislocations (BPDs) were revealed in transmission topographs and grazing topographs. When the samples were connected to external voltage ranging from 1kV to 4kV, there were no observable signs of dislocation movement. This indicates that the energy released from the transitioning of Vanadium states is lower than the activation energy for dislocation gliding.

Abstract: A method for mitigating loss of conformational stability in 150 mm n-type 4H SiC wafers was investigated. Modifications to the physical vapor transport (PVT) process used to grow the parent bulk crystals, combined with post-growth thermal treatment, were examined as means of reducing the internal stresses hypothesized to promote instability. The magnitude of the stresses was analyzed by mechanically thinning sets of wafers produced from each process to determine the critical thickness of stability loss. The average critical thickness was found to be reduced by 13% via growth cell modification, at a reduced level of thermal treatment relative to a control process, with all wafers becoming unstable greater than 30 μm below the minimum recorded production thickness. Assessment of the spatial uniformity of dislocations indicated that lower conformational stability corresponded to elevated densities of basal plane dislocations (BPDs) and threading edge dislocations (TEDs) at the wafer edge relative to the center.

Abstract: Revision total knee arthroplasties cause performed aseptic loosening, instability, and polyethylene wear. Separation or removal of the femoral component has been observed and this has the potential to severely damage the polyethylene component. In most cases 90% of the patients examined experienced significant medial or lateral condylar lift at some stage during the gait cycle. Using the MRI, a normal knee has maximum lateral lift is approx. 6.7 mm and maximum medial lift is approx. 2.1 mm, when a varus strees applied at a 90° knee flexion. Elevation of the lateral condyle due to valgus malalignment will distribute more contact force on the medial condyle. In this study, a polyethylene component of a posterior-stabilized right knee joint implant was developed to facilitate a high range of motion (ROM). Malalignment valgus was observed with the axes of knee motion joint implants were varied from 0°, 2°, 3° to 5 and knee bend measurements at 30°, 60°, 90°, 120°, and 150° of knee flexion. Using the knee kinematic motion simulator, the modified polyethylene component resulted in 0° malalignment there is no gap of the femoral component with the polyethylene component, from 30° to 150° of knee flexion. At 2° malalignment, the femoral component was raised by 0.5 mm at a 90° to 150° knee flexion and increased with increasing knee flexion. Maximum gap occurs at 5° malalignment in the amount of 5 mm at 150° of knee flexion. The aim of this study was therefore to evaluation malalignment valgus of the flexed knee using knee kinematic motion simulator, with reference to the tibiofemoral flexion gap. The result that the modified design is expected in an narrow down gap between femoral and polyethylene component used knee kinematic motion simulator, this accommodate deep knee flexion movement in daily activities and reduce the possibility of subluxation and dislocation at the polyethylene component during deep knee flexion. A wide gap between the femoral component and the polyethylene component and a significant amount of contact force in the medial condyle region might be the explanation for polyethylene component damage. It is expected that potential medial or lateral condylar lift at some stage during the gait cycle can be reduced.

Abstract: The review on bulk growth of SiC includes a basic overview on the widely used physical vapor transport method for processing of 4H-SiC boules as well as the discussion of three current research topics: (a) Sublimation bulk growth of large area, freestanding cubic SiC, (b) in-situ Visualization of the PVT Process using 2D and 3D X-ray based imaging and (c) prediction of dislocation formation and motion in SiC using a continuum model of dislocation dynamics (CDD).

Abstract: In this work, the effect of high temperature molten KOH wet etching on GaN/AlGaN epilayer has been investigated for different family of dislocations. The high etching temperature (up to 510°C) allows a good definition of the pits, making easy the observation and the counts. Such high temperature will allow a detailed study on the statistical distribution of the dislocations on whole wafer by optical microscope for screw/mixed dislocation. A comparison on dislocation density between AlGaN/GaN structure grown on Si (111) substrate and 4H-SiC substrate has been performed.

Abstract: At the time of prayer, most Muslims kneel with fully extended limbs (between 150° and 165°). Meanwhile, incidents such as hyperflexion in total knee arthroplasty (TKA) implant outside their designated configuration can lead wear or fracture of the polyethylene component. In this study, polyethylene component of posterior-stabilized right knee joint implant have been developed to facilitate higher range of motion (ROM). Finite element analysis (FEA) was used to analyze contact stresses on the polyethylene component. FEA was used to simulate weight-bearing condition at 0°, 30°, 60°, 90°, 120°, and 150° of knee flexion. Modified polyethylene component results in better performance in terms of contact stresses, especially at 120° of knee flexion. Current result shows contact stresses above 120 MPa were measured at the posterior post polyethylene, when 4000 N force was applied. Minimum contact stress on the medial condyles was 630 KPa at 120° of knee flexion, while on the lateral condyles, the minimum contact stress was 250 KPa at 150° of knee flexion. With this finding, the current polyethylene component design is expected to accommodate deep knee flexion movement in daily activities and can reduce potential of wear or fracture of the polyethylene component during deep knee flexion.