Articles by keyword: «Divacancy»
-
Calculated Positron Annihilation Parameters for Defects in SiC
Published in: Silicon Carbide and Related Materials 2000 (p533) -
Defect-Engineering Rad-Hard Detectors for the CERN LHC
Published in: Defects in Semiconductors 19 (p671) -
Defects in SiC: Theory
Published in: Silicon Carbide and Related Materials 2010 (p225) -
Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy
Published in: Diffusion in Silicon (p193) -
Divacancy and Its Identification: Theory
Published in: Silicon Carbide and Related Materials 2005 (p523) -
Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature
Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p21) -
Divacancy Mechanism of Brass Dezincificating Verified by Means of PAS
Published in: Positron Annihilation - ICPA-9 (p1189) -
Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
Published in: Silicon Carbide and Related Materials 2005 (p527) -
Electrical and Structural Properties of Al and B Implanted 4H-SiC
Published in: Silicon Carbide and Related Materials - 1999 (p909) -
Formation of Vacancies and Divacancies in Plane-Stressed Silicon
Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p433) -
Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory
Published in: Defects in Semiconductors 19 (p1321) -
Measurement of the Impurity Diffusion of Al in Ni by Laser Induced Breakdown Spectrometry (LIBS)
Published in: Diffusion in Materials DIMAT2000 (p109) -
Model of Defect Reactions in Melt-Grown GaAs
Published in: Defect and Diffusion Forum Vols. 138-139 (p35) -
On the Properties of Divacancies in Si1-xGex
Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p545) -
Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
Published in: Silicon Carbide and Related Materials 2007 (p409)