Papers by Keyword: Domain Engineering

Abstract: This paper first introduces the basic concept of UML and artifacts, then discuss the UML and artifacts in the important role of information systems development, and combined with the development of information system of UML and components of feasibility analysis are studied, finally combined component model with UML modeling technology to develop information system has carried on the systematic study, based on UML is proposed and the components of information system development process.

Abstract: Feature-oriented domain analysis has become a more popular method for domain analysis today. However, feature model the main products of feature-oriented domain analysis method is very difficult to translate into the form of machine recognition. Moreover, it can't model detection. Feature model based on ontology can make up for these shortcomings, so this paper will study on feature modeling based on ontology. The main contents of this paper are: relationship between feature model and ontology, feature modeling framework based on ontology, the advantage and disadvantage of feature model based on ontology and general feature model.

Abstract: Scanning force microscopy is used to investigate nanoscale ferroelectric domain engineering in near-stoichiometric lithium niobate (SLN) single crystals. The topography of the SLN single crystal was studied after polished to about 10 micron thickness. Dot patterns of the domain structure were fabricated by applying positive DC voltages of magnitude form 80 to 100 V with different pulse width from 0.5 to 20 s. The dot nanodomains of radius down to 200 nm were fabricated. With the increase of the magnitude of voltage and pulse width, feature size of switched domains increased to 940 nm.

Abstract: Engineered domain configuration was induced into barium titanate (BaTiO3) single crystals, and the d33 piezoelectricity was investigated as a function of domain size. Prior to the domain engineering, the dependence of domain configuration on the temperature and the electric-field was investigated, and above Curie temperature (Tc), when the electric-field over 16 kV/cm was applied along [111]c direction, the fine engineered domain configuration appeared. On the basis of the above information, the 33 resonators with different domain sizes were successfully prepared. Their piezoelectric measurement revealed that the d33 of the 33 resonators with fine-engineered domain configurations were higher than those of BaTiO3 single-domain crystals. Moreover, d33 increased with decreasing domain sizes. The highest d33 of 289 pC/N was obtained in the BaTiO3 crystal with a domain size of 13μm.