Papers by Keyword: Drift Mobility

Abstract: Electron mobility along the c-axis is the most important in SiC because the current flows along this direction in vertical SiC devices. However, previous reports on the drift mobility along the c-axis are still limited because of the difficulty of sample preparation or analysis. In this study, the authors presented the method to estimate the electron drift mobility of a lightly-doped epitaxial layer by using SiC(0001) vertical Schottky barrier diodes (SBDs). For the analyses, the effects of current spreading and series resistance were carefully considered based on experimental results obtained from SBDs with various device parameters, leading to a more accurate estimation. The mobility along the c-axis was obtained as 1070 ± 290 cm²/Vs for a donor density of 1 × 10¹⁵ cm^-3, and it was compared with the results by Hall effect measurement.

Abstract: Samples of Cr doped cobalt ferrite were prepared by co-precipitation route. These particles were characterized by X-ray diffraction (XRD) at room temperature. The structural properties were observed before and after sintering. The FCC spinel structure was confirmed by XRD patterns of the samples. The crystallite sizes lie in the range of 37-60 nm. DC electrical properties as a function composition were measured. Scanning electron microscopy was used in order to investigate the surface morphology of the prepared samples. The system for thermoelectric power measurement was designed, developed and calibrated in the laboratory. The room temperature thermoelectric power was measured for the prepared samples. The magnitude of Seebeck coefficient depends on the composition and resistivity of the samples. The obtained values of Seebeck coefficient for CoFe₂O₄ are in good agreement to the reported values. Determined values of Seebeck coefficient for other studied compositions are an addition to the literature.

Abstract: In this paper, the transport properties of Hg0.8Cd0.2Te have been investigated at 77 K using the hydrodynamic model. We remarked that ionized impurity scattering mechanism plays a dominant role in this material at low electric field. The drift velocity, mean energy and drift mobility are determined as functions of the electric field strength. Comparison is made with Monte Carlo calculations and experimental results. The obtained velocity-field curve is in good agreement with reported experimental data.