HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «EPR»

• A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p477)
• A Hydrogen-Related Defect in Polycrystalline CVD Diamond
  Published in: Defects in Semiconductors 18 (p825)
• A Novel Electron Paramagnetic Resonance Phenomenon in a Barium Stronium Titanate Ceramic
  Published in: Manufacturing Science and Technology (p1050)
• Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals
  Published in: Silicon Carbide and Related Materials 2003 (p75)
• Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga_1-xAl_xSb/InAs/Ga_1-xAl_xSb Single Quantum Wells
  Published in: Defects in Semiconductors 17 (p611)
• Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
  Published in: Silicon Carbide and Related Materials 2003 (p787)
• Annealing Study on Radiation-Induced Defects in 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p517)
• Anomalous Behaviour of the EPR Spectra of Defects in (Y,Sm)123 Ceramics with Oxygen Deficiency at Low Temperatures
  Published in: Defects in Insulating Materials (p77)
• Cadmium-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification
  Published in: Defects in Semiconductors 19 (p423)
• Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p551)
• Charge Transfer at Ti Ions in ZnTe
  Published in: Defects in Semiconductors 19 (p1401)
• Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap
  Published in: Silicon Carbide and Related Materials 2001 (p819)
• CSCW Based Dental Clinic Image & Video Signal Processing
  Published in: Mechanical Engineering, Materials and Energy (p1534)
• Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2007 (p401)
• Defect Chemistry and Transport Properties of Solid Electrolytes Including the Influence of Redox-Activ Impurity Ions
  Published in: Electroceramics in Japan II (p193)