Papers by Keyword: Electric Field

Abstract: The capacitance of (1-x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-xPT) [001]-oriented single crystal was examined as a function of temperature and applied external dc electric field. The phase transition temperatures under the applied electric field were measured upon cooling the crystal (zero-field heating field-cooling condition) from paraelectric cubic phase. From these data, temperature versus electric field phase diagram of PMN-xPT crystal have been constructed and discussed.

Abstract: In this research, Polyethersulfone (PES) and Polyvinylidene Fluoride (PVDF) with the addition of a Titanium Dioxide (TiO₂) blanded membrane were prepared using the DC 15000 V electric field method. The investigation of this research is the adding result of Titanium Dioxide (TiO₂) with the DC 15000 V electric field methos such as the mechanical properties of membranes and water treatment performance. The surface mixture of Polyethersulfone (PES) and Polyvinylidene Fluoride (PVDF) membranes is characterized using SEM, the membrane pore size shrinks and forms evenly with the addition of Titanium Dioxide (TiO₂) and DC electric field methods. Tensile tests were carried out to obtain the mechanical properties of Polyethersulfone (PES) and Polyvinylidene Fluoride (PVDF) by adding Titanium Dioxide (TiO₂) mixture membrane, which showed an increase in optimal tensile strength to 3.86 MPa at a concentration of 30% Polyethersulfone (PES) and also increased to 1.15 MPa at 20% Polyvinylidene Fluoride (PVDF). The membrane surface was examined using contact angle measurements, which in the mixed membrane Polyethersulfone (PES) and Polyvinylidene Fluoride (PVDF) showed a decrease in the angle between the range of 43^o - 46^o. Therefore, hydrophilicity makes it possible to suppress the permeate flux of pure water. Making membranes with the addition of Titanium Dioxide (TiO₂), and assisted by DC electric fields opens up new ways to increase membrane strength, hydrophilicity, shrink and make pore sizes evenly formed.

Abstract: In this work, we have analyzed the digital and analog performance for InGaAs/InP heterojunction Gate all around MOS structure. A detailed study on the impact of Barrier thickness on different analog and digital performance for an InGaAs/InP hetero structure GAA MOSFET is carried out by using TCAD device simulation. The electrical parameters such as surface potential, electric field, transfer characteristics, output characteristics, transconductance and output conductance is carried out and analyzed by varying the barrier thickness from 1 nm to 4 nm. Based on the simulation results it is investigated that the effect of the all electrical parameters in the nanoscale devices. It has been seen from the presented results that the influence of barrier thickness variation gives the notable improvement in drain current. The impact of InGaAs/InP hetero structure and barrier thickness variation claims GAA MOSFET as a promising candidate for VLSI applications. Keywords: Heterojunction, InGaAs/InP, TCAD, Analog parameters.

Abstract: A surface charge density distribution on natural crystal samples is investigated in the paper. Here are revealed regularities of electromagnetic signal amplitude changes upon acoustic excitation of electrified calcite samples depending on the size of the crystals.

Abstract: In this paper, an analytical model for modified Surrounding Gate Tunnel FET with gate stack engineering and different gate metals has been developed. Further, considering the scaling advantageous of Gate stack engineering and high degree performance of dual material engineering, the both has been integrated into a novel structure known as Surrounding Gate (SG) Tunnel FET with stacked oxide SiO₂/high-k and dual material (DM) has been proposed. The two dimensional (2D) potential at the surface and electric field mathematical models for the DMSG TFET are developed by solving 2D Poisson's equation with matching device boundary conditions. Based on the Kane's formula, mathematical expression for the band-to-band (BTB) tunneling generation rate is derived and then used to calculate the drain current. The impact on the proposed device performance due to the variation of different device parameters has also been studied. It has been found from the presented results that the ON current of the DMSG TFET with stack is 10^-6A, OFF current is 10^-13A and ON/OFF ratio is 10⁷. The mathematical results have been verified using the simulated results obtained from TCAD, a 3-D device simulator from ATLAS.

Abstract: With the ever-increasing concern about the energy and environment crises, aluminum alloys are becoming increasingly desirable in the automotive, aerospace, construction and other related industries due to their high specific strength. Various heat-treatment–stamping integrated techniques have been invented to address the formability challenge of aluminum alloy sheets. Electric field affects the heat treatment process of aluminum alloys. In this paper, a device for application of electric field during the heat treatment was developed. The maximum dimensions of specimen are determined via observing the distortion of metal sheets after quenching in cool water. The high-temperature resistant pure nickel wire gains a high-voltage proof performance by wearing bowl-shaped porcelain tubes, and is used to connect electrodes to power supply. The high-voltage resistant mica plates are bolted together to fill the gap between the specimen and electrode. This device was then used in a common commercial furnace to study the effect of electric field applied during the heat treatment on mechanical properties of AA 6082 sheets. It is found that electric field could enhance mechanical properties of AA 6082. The application of electric field has a potential to lower the cost of heat-treatment–stamping integrated techniques.

Abstract: In this paper, a comparative analysis of the Tri-gate MOSFET device structure with respect to Single Material Gate (SMG) Tri-gate MOSFET, Double Material Gate (DMG) Tri-gate MOSFET and Triple Material Gate (TMG) Tri-gate MOSFET with & without Hafnium dioxide as high-K dielectric material is employed using Silvaco TCAD Atlas Tool. It shows a compact model and better DC, AC performance for triple material gate structures and yields a high drive current of the device for TMG Tri-gate MOSFET with high-k dielectrics and shows a better electrical characteristics in comparison with other device structures.

Abstract: This paper describes the analytical modeling and simulation of Triple Material Double Gate Metal Oxide Semiconductor Field Effect Transistor (TMDG MOSFET) with no junctions. Three kind of gate materials with different work function values over the channel helps to improve the ON current and to form a barrier in the channel helps to reduce OFF current. It has been found from the obtained results that the OFF current or leakage current of the device is exactly low (I_OFF =10^-11 A) which is fit for low power applications. Also, the extracted value of I_ON current (10^-3 A) has proved that there is a remarkable improvement with decreasing device dimensions. The overall gate length (L), work functions of gate materials, oxide thickness (t_ox), silicon thickness (t_si) and doping concentration (N_d) are optimized at 60nm, 4.8eV, 4.6eV, 4.4eV, 1nm, 10nm and 10¹⁹ cm^-3 respectively. The 2-D Poisson equation has been solved by using parabolic approximation technique to obtain the potential distribution function in the channel. Based on this expression, analytical models of the lateral electric field, subthreshold slope and drain current for Junctionless Triple Material Double Gate Metal oxide semiconductor Field Effect Transistor (JL TMDG MOSFET) were derived. Finally, the validity of the proposed analytical model is compared with numerical solution simulation data results which are obtained by using TCAD device simulator.

Abstract: The self-organization of COOH-functionalized multiwall carbon nanotubes (MWCNTs) during droplet evaporation of their aqueous suspension in a constant uniform electric field (E) was investigated. It was established that the COOH-functionalization polarizes the MWCNTs in the transverse direction to their axis. Depending on their size, MWCNTs tended to agglomerate into three different stable structures in different drop regions. There were linear, fractal and cluster structures (LS, FS, and CS). Sizes of the FSs decreased as 1/Е, whereas the rate of their growth increased as Е². The single-walled carbon nanotubes (SWCNTs) were found inside the LSs and CSs. The chiral indices of the SWCNTs were determined, corresponding to metallic and semiconducting conductivities. An analysis showed that as a result of coagulation and amassment of the carbon nanotubes (CNTs) near electrodes, there were formed conductive regions. When the concentration of MWCNTs reached some value in part nearest to an electrode, this part became conductive. The positive and negative electrodes, formed now by MWCNTs, shifted towards each other. The observed effects show that considered self-organization is controllable by the electric field.

Abstract: This paper deals with synovial joints which are characterized by their large degree of motion. In synovial joints, magnetic field in addition to electric field is added to disperse the nutrients from the synovial fluid to cartilage by considering both BJ and BJR conditions. The governing equation of the physical model is solved analytically and computations are carried out for the parameters involved in the system under different boundary conditions. The obtained computational results indicate that a drastic improvement can be found for the efficiency of artificial joints with combined effects of electric and magnetic fields on electrohydrodynamic dispersion of biological bearings.