Papers by Keyword: Electrical Measurement

Abstract: Positron annihilation lifetime (PAL) is one of the most important nuclear techniques used in material science. Electrical measurements are also used in material science. Samples of 25 % deformation have been used for these studies. Both positron annihilation lifetime and electrical measurements were used to determined the activation energy of migration the dislocation in 7075 alloy. The isothermal annealing measurements were performed at 643, 663, 683 and 703 K. The activation energy of migration the dislocation are obtained as 1.35 ± 0.16 eV and 1.25 ± 0.05 eV for positron annihilation lifetime and electrical techniques respectively.

Abstract: To measurement Air speed, there are many methods, for example Hot Wire, Ultrasonic measurement and etc. This method use transistor for measurement. The h_fe of transistor is variable in different Thermo. In flow of air, the h_fe is not equal without flow.

Abstract: Positron annihilation lifetime (PAL) measurement is one of the most important nuclear techniques used in materials science. Electrical measurements are also used in materials science. Both PAL and electrical measurements were used here to determine the activation energy of migration of dislocations in one of the most important engineering aluminum alloys: 2024. Samples of 25% deformed (thickness reduction) material have been used for these studies. The isothermal annealing measurements were performed at 583, 603, 623 and 643K for both techniques. The activation energy of migration of the dislocation was found to be equal to 1.24 ± 0.08eV by using PAL measurements and to 1.35 ± 0.01eV by using the electrical technique.

Abstract: Positron Annihilation Doppler Broadening Spectroscopy (PADPS) is a nondestructive technique used in materials science. Electrical measurements are one of the oldest techniques also used in materials science. This paper aims to discuss the availability of using both PADPS and electrical measurements as diagnostic techniques to detect defects in a set of plastically deformed 5454 wrought aluminum alloys. The results of the positron annihilation measurements and the electrical measurements were analyzed in terms of the two-state trapping model. This model can be used to investigate both the defect and dislocation densities of the samples under investigation. Results obtained by both nuclear and electrical techniques have been reported.

Abstract: Fourier transform infrared (FTIR) spectroscopy, contact angle, and electrical measurements were used to study porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) processed with alkylmonochlorosilanes having chain lengths of one to eighteen carbon atoms dissolved in supercritical carbon dioxide at 155-185 atm and 55-60°C to repair oxygen ashing damage. The FTIR results showed that all chemistries reacted with silanol groups on the surface of the pores producing covalent Si-O-Si bonds. Self-condensation between the alkylsilanols with chain lengths above four carbon atoms produced a physisorbed residue, which was partially removed after rinsing with pure scCO2. The hydrophobicity of the blanket p-MSQ surface was recovered, while the initial dielectric constant of 2.4 for the blanket p-MSQ surface was restored after treatment. With an increase in the length of the alkyl chain, the contact angle increased from 84° to 108° and the dielectric constant measured on metal-insulator-semiconductor capacitors was approximately constant in the range 2.4 ± 0.05. The monochlorosilanes restore the dielectric constant and surface properties of mesoporous p-MSQ and are candidate pore sealing additives.