| Paper Title | Page |
|---|---|
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A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes Authors: J. Vacas, H. Lahrèche, Teresa Monteiro, C. Gaspar, Eduarda Pereira, Christian Brylinski, M.A. di Forte-Poisson |
1651 |
|
Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias Authors: Kevin M. Speer, David J. Spry, Andrew J. Trunek, Philip G. Neudeck, M.A. Crimp, J.T. Hile, C. Burda, P. Pirouz |
223 |
|
Authors: L. Heikkilä, T. Kuusela, H.-P. Hedman, A. Pavlov, H. Ihantola |
13 |
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Amorphous Diamond for Generating Cold Cathode Fluorescence Light Authors: James C. Sung, Ming Chi Kan, Shao Chung Hu |
1429 |
|
Authors: Gang Cheng, Zengqi Xie, Ying Fang Zhang, Yuguang Ma, Shi Yong Liu |
1805 |
|
Cathodoluminescence and Electroluminescence of Semiconductor Structures in SEM Authors: Mariusz Płuska, Andrzej Czerwiński, Jacek Ratajczak, Anna Szerling, Jerzy Kątcki |
20 |
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Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission Authors: Aurelie Thuaire, Michel Mermoux, Alexandre Crisci, Nicolas Camara, Edwige Bano, Francis Baillet, Etienne Pernot |
437 |
|
Authors: Sung Min Park, Mun Ja Kim, Sang Hyun Park, Jin Young Kim, Ji Beom Yoo |
160 |
|
Characterization of Porous Silicon Light Emitting Diodes in High Current Density Conditions Authors: S. La Monica, Marco Balucani, S. Lazarouk, G. Maiello, G. Masini, P. Jaguiro, A. Ferrari |
21 |
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Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes Authors: Y. Wang, L. Chen, M.K. Mikhov, G. Samson, B.J. Skromme |
363 |