Papers by Keyword: Electroluminescence

Abstract: Quantum dots of CdSe, CdS and ZnS QDs were prepared by chemical reaction and used to fabricate organic quantum dot hybrid junction device. QD-LEDs were fabricated using ITO/TPD: PMMA/CdSe/Al, ITO/TPD: PMMA/CdS/Al and ITO/TPD: PMMA/ZnS/Al QDs devices which synthesized by phase segregation method. The hybrid white light emitting devices consists, of two-layers deposited successively on the ITO glass substrate; the first layer was of N, N’-bis (3-methylphenyl)-N, N’-bis (phenyl) benzidine (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers in ratio 1:1, while the second layer was 0.5wt% from each type of the (CdSe, CdS and ZnS) QDs for each device.The optical properties of QDs were characterized by UV-Vis. and photoluminescence (PL) spectrometer. The results show that the prepared QDs were nanocrystalline with defects formation. The E_g calculated from PL were 2.38, 2.69 and 3.64 eV for CdSe, CdS and ZnS respectively. The generated white light properties with acceptable efficiency using confinement effect that makes the energy gap larger, thus the direction of the light sites are toward the centre of white light color.The hybrid junction devices (EL devices) were characterized by room temperature PL and electroluminescence (EL). Current-voltage (I–V) characteristics indicate that the output current is good compared to the few voltages ( 8-11.5 V) used which gives acceptable results to get a generation of white light. The EL spectrum reveals a broad emission band covering the range from 350 - 700 nm. The emissions causing this white luminescence were identified depending on the chromaticity coordinates (CIE 1931). The correlated color temperature (CCT) was found to be about 5500, 4885 and 3400K respectively. Fabrication of EL-devices from semiconductors material (CdSe, CdS and ZnS QDs) with hole injection organic polymer (TPD) was effective in white light generation. The recombination processes and I-V characteristics gives rises to the output current is good compared to the few voltages used which gives acceptable results to get a generation of white light.

Abstract: Quantum dots of CdSe, CdS and ZnS QDs were prepared by chemical reaction and used to fabricate organic quantum dot hybrid junction device. QD-LEDs were fabricated using layers of ITO/TPD: PMMA/CdSe/Alq₃, ITO/TPD: PMMA/CdS/Alq₃ and ITO/TPD: PMMA/ZnS/Alq₃ devices which prepared by phase segregation method. The hybrid white light emitting devices consists, of three-layers deposited successively on the ITO glass substrate; the first layer was of N, N’-bis (3-methylphenyl)-N, N’-bis (phenyl) benzidine (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers. The second layer was QDs while the third layer was tris (8-hydroxyquinoline) aluminium (Alq₃). The results of the optical properties show that the prepared QDs were nanocrystalline with defects formation. The calculated of energy gaps from photoluminescence (PL) spectrometer were 2.38, 2.69 and 3.64 eV for CdSe, CdS and ZnS respectively. The generated white light has acceptable efficiency using confinement effect which makes the energy gap larger, so that the direction of the light sites are toward the center of white light color. The hybrid junction devices (EL devices) were characterized by room temperature PL and electroluminescence (EL). Current-voltage (I–V) characteristics indicate that the output current is good compared to the few voltages ( 8-10.3 V) used which gives acceptable results to get a generation of white light. The EL spectrum reveals a broad emission band covering the range from 350 - 700 nm. The emissions causing this white luminescence were identified depending on the chromaticity coordinates (CIE 1931). The correlated color temperature (CCT) was found to be about 6250, 5310 and 5227K respectively. Fabrication of EL-devices from semiconductors material (CdSe, CdS and ZnS QDs) with hole injection organic polymer (TPD) and electron injection from organic molecules (Alq₃) was effective in white light generation

Abstract: Quantum dots (QDs) of zinc sulfide (ZnS) was prepared by chemical reaction with different potential of hydrogen (pH) and used to fabricate organic quantum dot hybrid junction device. The optical properties of QDs were characterized by ultraviolet-visible (UV-Vis.) and photoluminescence (PL) spectrometer. The results show that the prepared QDs were nanocrystalline with defects formation. The energy gap (E_g) calculated from PL were 3.64, 3.53 and 3.35 eV for pH=8, 10 and 12 respectively. This decreasing of energy gaps is results of the effect the pH solution increases, which in turn leads to the shifted of the PL spectrum toward red shifted, which makes the energy bands at surface states are shallow bands. Fabrication of EL-device from ZnS QDs with different pH value was effective in efficient white light generation and can be the color of emerged light with different intensities.

Abstract: The research is aimed to the investigation of the microstructure defects in the silicon and the thin-film CIGS solar cells. These defects have their origin mainly in the technological process of a production but they can be caused by an accidental mechanical stress during a normal operation, too. That leads to a formation of the micro-cracks and the fractures, which have a significant effect on a device efficiency and reliability. The reverse-bias conditions are usually used for the defects charac- terization purposes. The mechanical induced defects increase a reverse current which leads to a strong overheating in the local breakdowns and the surroundings areas, thus for the defects localization pur- poses an infrared imaging and an electroluminescence method is used. Beyond these commonly used methods the results from the electrical current noise fluctuations observed in a frequency domain are presented in this work. The noise fluctuations measurement is a reliable indicator of a device quality and allow us to qualify the device damage extent. Using combination of these methods it is possible to localize the particular defects, assess the degree of a damage and classify the elimination process of the particular defects.

Abstract: Alternating-current (AC) electroluminescent (EL) devices on fabrics with high brightness are presented. The EL-devices were fabricated via knife coating; inorganic luminous pigments are based on zinc sulfide. Effects of parameters influencing the brightness were investigated. These parameters are the AC-voltage, AC-frequency, AC-waveform, layer composition of the luminous capacitor and the fabric. Introducing a flexible reflecting dielectric layer enhances the light yield on fine woven fabrics with green luminous pigment. This can be achieved with small concentrations of reflective white pigments such as titanium dioxide, maintaining the flexibility and bendability of the textile substrate. The produced luminous textiles are investigated as a possible replacement for light boxes used in the therapy of seasonal affective disorder (SAD). A high luminous emittance and a high portion of short and energy rich wavelengths are necessary for the treatment. Contrarily to state-of-the-art light boxes a higher acceptance of light therapy is expected, because a luminous textile can be integrated easily and unremarkably into the living environment.

Abstract: Currently electroluminescent devices, operated by alternating current (AC-EL) on film, paper or textile are based on a capacitor with one transparent electrode and one generally non-transparent, highly conductive electrode and a light-emitting dielectric layer in-between. The light-emitting pigments are mostly based on doped zinc sulfide. Currently available commercial products contain encapsulated pigments dispersed in organic solvents. Those dispersions allow AC-EL-devices illuminating solitary in the colors white, green, blue-green, blue and orange. Blending those pigments leads to numerous new colors however, always linked to loss of brightness in the final device. In this research work the combination of fluorescent organic and inorganic dyestuffs with inorganic EL-phosphors was investigated. The AC-EL-devices were all based on textile materials; all dispersions were free of organic solvents. Special focus was directed to the concentration of dyes in an additional layer within the EL-capacitor as well as the thickness and particularly the positioning of the layer. In the result colors were achieved, which cannot be found by blending the phosphors, such as yellow and red. In addition, depending on the type of added fluorescent dyestuff layer, the brightness could be increased substantially.

Abstract: Electroluminescence offers a versatile and simple route to printed light sources. A layer of poly (3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) was inkjet printed onto polyethylene terephthalate (PET) mesh fabrics. The conductivity–transparency relationship is determined for textile-based conductors with different thicknesses of the printed PEDOT:PSS film. Alternating current powder electroluminescent devices were made by extrusion printing a layer of phosphor onto aluminum foil and then covering this with a fabric electrode. These devices are compared with indium tin oxide (ITO) glass electrodes on a similar device. Textiles coated with conducting polymers are a potential alternative to coated polymer films for flexible, transparent conductors. The strain response of these electrodes was improved by incorporating carbon nanotubes into the conductor. These bridge cracks that form on stretching.

Abstract: Powder samples of (Ca,Sr)TiO₃:Er were prepared by a solid-state reaction method. Photoluminescence due to f-f transitions of Er³⁺ was not induced by band-gap excitation of (Ca,Sr)TiO₃ but by f-f transitions of Er³⁺. An electroluminescent device in which thin films of Ca_0.6Sr_0.4TiO₃:Er and SnO₂:Sb are stacked alternately was prepared by sol-gel and spin-coating methods. Very weak electroluminescence due to f-f transition of Er³⁺ was observed in the device.

Abstract: An array of GaSb nanocrystallites (NCs) was formed on Si(001) substrate by solid-phase epitaxy at 500 °C. Owing to the embedded GaSb NCs, p⁺‑Si/NC‑GaSb/n‑Si mesa diode spectral sensitivity has extended up to 1.6 µm at room temperature, and its integral sensitivity has increased by 4–5% in the wavelength range of 1200–1600 nm, as compared to a conventional Si diode. This result was achieved by embedding only 10 nm of GaSb in the form of NCs inside a silicon matrix. In addition, we could obtain a significant electroluminescence (EL) signal at 120 K in a very wide wavelength range from 1.3 to 2.1 µm (0.95–0.59 eV). The EL spectrum has a broad maximum at 1700 nm (0.73 eV). The threshold pumping current density was as low as 0.75 A/cm².

Abstract: Polymeric material such as low density polyethylene (LDPE) has been used for decades as insulating material. Any polymeric material will experience degradation after prolonged application of high electrical stresses. Deeper understanding of the long term electrical degradation of the insulating material is necessary to predict the life of high voltage cable. Electroluminescence method (EL) is used to detect the breakdown voltages of thin film LDPE. This method utilizes a Peltier cooled electron multiplying charge coupled device (EMCCD) camera to detect the breakdown of the sample. Statistical distribution of the AC breakdown voltages of 100μm virgin and aged LDPE has been analysed. Comparison for the best fitted distribution was made for Weibull distribution and Johnson SB distribution using Anderson-Darling (A2) goodness-of-fit and Kolmogorov-Smirnov (D) goodness-of-fit (GOF). Johnson SB is rarely used in high voltage engineering application. The probability density function (PDF) and the cumulative density function (CDF) for both distributions are defined in this article. The statistical parameters used are estimated based on Maximum Likelihood Estimation (MLE) for both distributions. Based on the statistical analysis, it is observed that Johnson SB provide better fitting than Weibull distribution with lower fitting error and that 3-parameter Weibull is much better fitting than 2-parameter Weibull distribution for most cases. It is also found that the median breakdown voltage of LDPE samples decreases with increasing aging temperature.