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Articles by keyword: «Electron Beam Induced Current (EBIC)»

• Beam Injection Methods as Tools for Studying Extended Defects in Semiconductors: Characteristics and Capabilities
  Published in: Polycrystalline Semiconductors IV (p51)
• Challenging the Spatial Resolution Limits of CL and EBIC
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p19)
• Characterization of Laser Structures by EBIC Measurements and Simulation
  Published in: Beam Injection Assessment of Defects in Semiconductors (p69)
• Charge Collection Scanning Microscopy: Non-Conventional Applications
  Published in: Beam Injection Assessment of Defects in Semiconductors (p1)
• CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2009 (p211)
• Copper Precipitation at the Silicon/Silicon Dioxide Interface: Microstructure and Electrical Properties
  Published in: Intergranular and Interphase Boundaries in Materials (p591)
• Correlation of Cathodoluminescence and EBIC Contrast in GaAs/Al_xGa_1-xAs Quantum Well Structures
  Published in: Beam Injection Assessment of Defects in Semiconductors (p473)
• Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p489)
• Correlative SEM/STM Study of Local Electronic Properties in Compound Semiconductors
  Published in: Beam Injection Assessment of Defects in Semiconductors (p273)
• Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique
  Published in: Beam Injection Assessment of Defects in Semiconductors (p407)
• Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p65)
• Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching
  Published in: Silicon Carbide and Related Materials 2010 (p294)
• Effects of Grain Boundary Structure and Chemistry on Electrical Activity in Polycrystalline Silicon
  Published in: Polycrystalline Semiconductors VII (p333)
• Electrical Properties of SiGe Epitaxial Layers for Photovoltaic Application as Studied by Scanning Electron Microscopical Methods
  Published in: Beam Injection Assessment of Defects in Semiconductors (p509)
• Electron Beam Induced Current Contrast of Oxygen Precipitation Related Defects in Czochralski Silicon
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p237)