Papers by Keyword: Electron Mobility

Abstract: This research presents the effect of temperature that influence to the performance of 16 nm SOI n-FinFET structure. The structure has created with structure tool on GTS Framework. The transistor has 1 nanometer HfO₂ gate oxide with all metal contact and biased on Minimos-NT tool, with variation of temperatures from 300 K to 420 K with 30 K per step. The result found the decrease in saturation current, threshold voltage and mobility. The temperature brought electron and rose the density of electron as the potential from power supply that energized to the structure. They made mobility fall with them rising. The temperature makes a performance of FinFET structure.

Abstract: Low field electron mobility in heavily nitrogen doped 4H-SiC epitaxial layers as well as in the regions formed by ion implantation was extracted from Hall and van der Pauw measurements. The measurements were done at room temperature in 4H-SiC samples with carrier concentrations ranged from 2.8×10¹⁸ to 2.3×10¹⁹ cm^-3. Fitting parameters in empirical expression given by Caughey and Thomas for room temperature low field electron mobility depending on carrier concentration in 4H-SiC were extracted.

Abstract: The electron mobility is calculated for h-BN nanosheets (h-BNNSs) and graphene with and without doping of manganese at high electric fields via acoustical deformation potential (ADP) scattering mechanism and piezoelectric scattering (Polar Acoustical Phonon (PAP) mechanism at low temperatures. Calculation includes the variation of electron Fermi energy and effective mass with high electric fields and with variation of Mn concentrations. Comparison of mobility in both the cases of with and without doping is carried out. It is observed that the net electron mobility due to both ADP and PAP mechanisms in graphene is much larger than that for h-BNNS for both the cases of with and without doping of manganese at low temperatures.

Abstract: The effect of the Ge mole fraction in a Si_1-xGe_x on single and dual channel Vertical Strained SiGe Impact Ionization MOSFET was successfully analyzed. It is found that the threshold voltage, breakdown voltage and sub-threshold slope of the devices was affected by the presence of the Germanium. A better performance in sub-threshold voltage of the devices was obtained for dual channel VESIMOS compared to single channel VESIMOS with a suitable amount of Germanium. Germanium has high and symmetric impact ionization rates to ensure the transition from OFF state to ON state is abrupt. With the appearance of the SiGe layer in the devices, has an advantage of the mobility enhancement of carriers in the devices operation. With the improvement of the Ge composition, it could transform VESIMOS into a new paradigm of devices which applicable to nanoelectronics with better electrical characteristics.

Abstract: InGaAs is direct and narrow bandgap material with ultrahigh electron mobility, and is a promising candidate for optoelectronic device in the near-infrared region. The main objective of this manuscript is to design an InGaAs semiconductor-based photodetectors nanowire infrared photodetector, which would be manipulated in optical response wavelength range at room temperature with high-detective and fast-responsive performances. Considering into account mature technology in laser device and for maximizing 1.55 um optical communication performance, the design of achieved bandwidth is >1 Gbps. According to the theoretical calculations, the fundamental parameters of the InGaAs core-shell nanowire APD photodetector device are obtained, with certain values of single nanowire diameter, lateral size and applied voltage, r=100 nm, l=1 μm, V_bias=10 V. Meanwhile, we deal with the electrons mobility of the internal nanowire based on three factors, size effect, temperature and electric field effect. The results demonstrate that the InGaAs nanowire APD is potential candidatefor high rate in satellite laser communication field.

Abstract: Properties of Si/buried oxide (BOX) systems with bonded interface in silicon-on-insulator (SOI) wafers were studied in this paper. Results show impact of the starting Si material - Czochralski (Cz) or float-zone (Fz) grown silicon on the electron mobility (μ_e) and BOX charge behavior in ultrathin SOI layers. In particular, there were found: 1) the μ_e ~ N_e^-0.3 dependencies at the electron density N_e in the range of 4х (10¹¹-10¹²) cm^-2 in accumulation Cz-SOI layers with the μ_e degradation when Si thickness decreases from 20 to 9 nm, and 2) the ~ N_e^-0.6 behavior of mobility with no degradation in Fz-SOI layers. Raman spectroscopy shows the structural modification of Cz-SOI layers. An origin of degradation of the electrical and structural properties for ultrathin SOI layer is discussed.

Abstract: Dye Sensitized Solar Cell (DSSC) based on metal oxide photo anode is of greater interest at the present scenario. The light harvesting capability of the photo anode is the most crucial factor in determining the efficiency of DSSC. Thus to decide on suitable photo anode to attain greater efficiency is critical confront. The wide band gap (3.6eV) and higher electron mobility (me ~ 250 cm² V^-1 S^‑1) of SnO₂ put together a promising material when compared to other photo electrode materials . Besides, its low sensitivity towards UV makes them more stable for a long time. This review will focus on recent progress in development of SnO₂ and hybrid SnO₂ based photo anode material and its allied key issues based on articles published in the last five years. A short introduction about the current energy scenario, DSSC principle and working will be presented followed by a brief description about the importance of photo anode in DSSC. Subsequently a complete review on SnO₂ and hybrid SnO₂ photo anode materials will be explained together with the recent year reports considering all the challenges and perspectives related to DSSC.

Abstract: Ps and radiolytic hydrogen yields anticorrelate in saturated hydrocarbons when molecular structure changes from a normal to a cyclic form. This fact is explained by much higher mobility of primary radical-cations in cyclic hydrocarbons than in normal ones.

Abstract: Solving the Schrödinger equation with strain Hamiltonian and combining with KP theory, we obtained the conductivity effective mass and density of states effective mass of strained Si_1-xGe_x(001) in this paper. On the basis of conductivity effective mass and density of states effective mass, considered of Fermi golden rule and Boltzman collision term approximation theory, scattering rate model was established in strained Si_1-xGe_x(001). Based on the conductivity effective mass and scattering rate models we discussed the dependence of electron mobility on stress and doping concentration in strained Si_1-xGe_x(001), it shows that electron mobility decrease with the increasing of stress and doping concentration. This result can provide valuable references to the research of electron mobility of strained Si_1-xGe_x materials and the design of devices.

Abstract: Si-based strained technology is currently an important topic of concern in the microelectronics field. The stress-induced enhancement of electron mobility contributes to the improved performance of Si-based strained devices. In this paper, Based on both the electron effective mass and the scattering rate models for strained-Si_1-xGe_x/Si (101), an analytical electron mobility model for biaxial compressive strained-Si_1-xGe_x /Si (101) is presented. The results show that the stress doesn’t make the electron mobility increased, but the electron mobility for [100] and [001] orientations decrease with increasing Ge fraction x, especially for [010] orientation expresses a sharp decrease. This physical phenomenon can be explained as: Although the applied stress (the higher the Ge fraction, the greater the applied stress) can enhance the electron mobility, alloy disorder scattering rate markedly increase. Overall the electron mobility decreases instead. The above result suggests that not all the mobilities for Si-based strained materials enhance with the stress applied. For the biaxial strained-SiGe material represented by Ge fraction, the effect of alloy disorder scattering on the enhancement of mobility must be concerned. The result can provide theoretical basis for the understanding of the improved physical characterizations and the enhanced mobility for Si-based strained materials.