Authors: Oleksandr Yakymchuk, Ivan Luzhnyi, Valerii Bekenev, Oleksii Bystrenko, Tetiana Bystrenko, Yuriy Solonin, Oleg Khyzhun
Abstract: We report on theoretical and experimental studies of the electronic structure of triclinic copper tungstate, CuWO4. The present data carried out within a Density Functional theory (DFT) framework reveal the importance of spin-resolved calculations for this tungstate. The spin-resolved DFT calculations indicate that that Cu 3d electronic states dominate the top of the valence band, whereas the main input of W 5d states occur at its bottom and lower part. However, the principal contributions to the valence band of CuWO4 come from O 2p electronic states giving the main input to the whole valence-band region except of its top. The chemical bonding in CuWO4 is characterized by essential contribution of the covalent component in addition to the ionic component. The present theoretical data are found to be in excellent agreement with the experimental XPS and XES measurements of polycrystalline copper tungstate.
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Authors: Farahdina Zain, Widayanti Widayanti, Sholihun Sholihun
Abstract: The effect of biaxial and uniaxial strains on the electronic structure of anatase is studied using Density Functional Theory (DFT) calculation with ultrasoft pseudopotential and a generalized gradient approximation (GGA) Perdew-Burke Ernzerhof (PBE) exchange-correlation. The lattice constant is optimized using the Birch-Murnaghan equation of states (BM-EOS) to get an optimized geometric structure of anatase TiO2. We apply biaxial and uniaxial strains to this optimized structure up to 16% and find that the applied strains change the band gap energy compared to a pure anatase with a different band gap energy up to 1.61 eV for biaxial strain and 0.35 eV for uniaxial strain. The biaxial strains increase gap energies except at +16% tensile strain, decreasing the gap energy to 0.04 eV. Uniaxial strains tend to increase as the strains increase except at-12 and-16%; their gap energy differences are 0.08 and 0.20 eV, respectively, smaller than that of the zero strain. The results also show that the applied 16% tensile strain significantly lengthens the atomic bonds; thus, we conclude that the maximum strain applied to anatase TiO2 is 16%.
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Authors: Art Anthony Z. Munio, Alfredo Q. Liboon Jr., Yhebron J. Lagud, Urbano B. Patayon, Alvanh Alem G. Pido, Mohamed Karouchi, Leo Cristobal C. Ambolode II
Abstract: Here we provide a description of arsenic (As) adsorption on the cellulose biopolymer using first-principles density functional theory. In all studied configurations, the process of As adsorption on the cellulose is an exothermic process indicated by the negative binding energy. The cellulose's hydroxyl and hydroxymethyl groups significantly interact with As atom, characterized by the binding energy. In all optimized configurations, the interactions are mainly described as chemical bonding. This claim is supported by the overlap of the electron localization function (ELF) in the interface of As and cellulose in all studied adsorption sites. The adsorption of As on the cellulose introduces new states in the vicinity of the Fermi energy, leading to the lower bandgap of the cellulose-As systems. Overall, these results imply that the As atom can be trapped and detected using cellulose-based material. These findings offer an explanation of earlier research works on cellulose-As systems. This work will also serve as a reference for fabricating cellulose-based material for sensing and removing As.
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Authors: Alexey V. Lukoyanov, Elena I. Shreder, Vyacheslav V. Marchenkov
Abstract: Theoretical ab initio calculations of the electronic structure were performed for the non-stoichiometric Mn1.75Co1.25Al Heusler alloy and compared with the electronic structure of the stoichiometric Mn2CoAl full Heusler alloy. Both compounds are assumed to have the L21-type crystal structure in the calculations, the non-stoichiometry is taken into account as a substitution of a Mn atom in a supercell. The calculation for the non-stoichiometric composition of Mn1.75Co1.25Al showed that taking non-stoichiometry into account leads to a decrease of the total magnetic moment. In comparison with the inverse type of Mn2CoAl, in both Mn2CoAl and Mn1.75Co1.25Al, the metallic type of the total density of states at the Fermi level was obtained in our calculations. In Mn1.75Co1.25Al, the total density of electronic states is found to be close to the one of the stoichiometric Mn2CoAl alloy in the majority spin projection, and in the minority spin projection spin polarization leads to the formation of the more intense peaks due to the appearance of an additional non-stoichiometric cobalt with a significant magnetic moment, as well as an increase in the magnetic moments of the other magnetic ions.
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Authors: Gik Hong Yeap, Sergey Rybchenko, Igor Itskevich, Stephanie Haywood, Peter Carrington, Anthony Krier
Abstract: InSb-based self-assembled quantum dots (SAQDs) are very promising for the mid-infrared (3-5 μm) optical range. We have analysed the electronic structure and optical properties of InAsxSb1-x/InAs dots. In this paper, we present the results of the modelling of electronic structure and optical properties from photoluminescence (PL) measurement for InAsxSb1-x/InAs SAQDs, focusing on the effects of SAQD morphology and composition. In particular, we analyse the electronic structure of InAsxSb1-x/InAs SAQD of various shapes, aspect ratios and compositions. We also suggest a method of assessing the geometry and composition of InAsxSb1-x/InAs quantum dots using their optical spectra and limited microscopy information. The calculated transition energies agree well with the experimental results. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa.
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Authors: Wen Hao Peng, Bin Bin Li, Kai Xuan Shi, Ping Chen
Abstract: The intermediate band semiconductor of AgGa1-xCrxS2 is investigated by the first principles calculations and further confirmed by the experimental results. The band structures of pure and Cr-doped crystals were calculated and it is shown that the crystal with a direct energy band gap of about 0.95 eV for AgGaS2. Because of Cr dopant, a metallic intermediate band (IB) is successfully formed in the host. From the partial density of states (PDOS) of Cr-doped AgGaS2, the IB mainly comes from the hybridization of the Cr-3d and S-3p states. Based on the theoretical predications, the Cr-doped AgGaS2 is synthesized by the high-temperature solid state reaction. Two extra absorption responses are detected in the absorption spectra. The optical absorption coefficients are enhanced in the visible radiation range due to the formation of metallic and isolated IB. Therefore, Cr-doped AgGaS2 with an intermediate band is suggested as a potential material to enhance the efficiency of solar cells.
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Authors: Ivan Luzhnyi, Valerij Bekenev, Natalia Denysyuk, Oleg Khyzhun
Abstract: We report on experimental and theoretical studies of the electronic structure of ternary Tl4CdI6 alloy. Our XPS results indicate low hygroscopicity of its surface. The first-principle calculations indicate that the valence-band region of Tl4CdI6 is dominated by contributions of I 5p states (mainly at the top and the central portion), while its bottom is prevailed by contributions of Tl 6s states. The theoretical data indicate that the Tl4CdI6 compound is a direct gap semiconductor with the band gap value of Eg = 2.03 eV. The calculations reveal that the significant covalent component (in addition to ionic component) is characteristic for the chemical Tl–I and Cd–I bonds of Tl4CdI6.
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Authors: Bilal K. Al-Rawi, Safaa Mustafa Hameed, Mohammed A.M. Alsaadi
Abstract: The current study investigated the electrical properties of Cadmium Telluride (CdTe)by using the first principle of density functional theory (DFT). The nanocrystals suggested being varied constantly over the network systematically so that the lowest value for energy is obtained, through which stability is obtained and through this exceptionality, the measurements of the properties are in their exact state. The conduction and the valence bandwidths were also studied. The investigations targeted the “highest occupied molecular orbital” (HOMO) [Ionization Potential], and the “lowest unoccupied molecular orbital” (LUMO) [Electron Affinity]. Total and cohesive energies, the atomic iconicity, electron affinity, energy gap (Eg), and the density of states (DOS) for 8, 16, 54, and 64 atoms. The results showed that the shape of the conduction and valence affect the crystal groups significantly, and the energy gap exhibited very close results to their practical counterparts that were previously conducted. When the lattice constant decreases the modulus of bulk and the waves of sound speed increase with the increase of the core atoms number. Subsequently, the applied pressure increases the Plasmon energy and bulk modulus. The key of study is to inspect if using materials in their nanoscale state gives special physical, electronic and optical properties through which devices are manufactured with high efficiency in the solar cell industry. Where the compound becomes a point of a sleeve, and the fluorescent peak shifts across the visible field to the UV field. This was obtained by controlling the size of the compound in 54 and 64, at which the energy gap showed an increase, which would make it more preferred to stimulate the electron from the valence band to the conduction band.
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Authors: Zhan Cheng, Guan Xing Zhang, Wei Min Long, Svitlana Maksymova, Jian Xiu Liu
Abstract: The first-principles calculations by CASTEP program based on the density functional theory is applied to calculate the cohesive energy, enthalpy of formation, elastic constant, density of states and Mulliken population of Ag3Sn、AgZn3 and Ag5Zn8. Furthermore, the elastic properties, bonding characteristics, and intrinsic connections of different phases are investigated. The results show that Ag3Sn、AgZn3 and Ag5Zn8 have stability structural, plasticity characteristics and different degrees of elastic anisotropy; Ag3Sn is the most stable structural, has the strongest alloying ability and the best plasticity. AgZn3 is the most unstable structure, has the worst plasticity; The strength of Ag5Zn8 is strongest, AgZn3 has the weakest strength, the largest shear resistance, and the highest hardness. Ag5Zn8 has the maximum Anisotropy index and Ag3Sn has the minimum Anisotropy index. Ag3Sn、AgZn3 and Ag5Zn8 are all have covalent bonds and ionic bonds, the ionic bonds decrease in the order Ag3Sn>Ag5Zn8>AgZn3 and covalent bonds decreases in the order Ag5Zn8>Ag3Sn>AgZn3.
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Authors: Xing Liu, Jia Fu, Man Man Han, Kai Xin Sun, Sheng Li Wei
Abstract: As a potential functional material in the perovskite family, the KCaF3 on electronic structure, elasticity, Debye temperature and anisotropy are studied based on density functional theory (DFT). Above all, the structural parameters of KCaF3 crystal are optimized. Then the elastic constants and Debye temperature are calculated. The results show that: (1) KCaF3 is composed of covalent bonds, in which the Ca-F bond is stronger than K-F. (2) Ca atom mainly contributes for the electronic properties of KCaF3. (3) The structural parameters of KCaF3 is in fair agreement with the experimental data. (4) The anisotropy of KCaF3 was analyzed from the pure and quasi waves, of which the longitudinal wave velocity in the direction of [100] is the larger than the others two directions ([110] and [111]). Finally, The homogenized elastic moduli (bulk modulus B, shear modulus G, Young's modulus E), Pugh and Poisson ratio, are obtained. This research is meaningful and thus to provides a good theoretical guidance for the design the new ABX3-type material with better performance.
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