Papers by Keyword: Ellipsometry

Abstract: Structures to Be Based on Hafnium Dioxide Are Regarded as the Most Perspective High-K Dielectric for Integration in MOS-Technology, Carbon Nanotubes Transistors. MOCVD (Metal-Organic Chemical Vapor Deposition) Techniques of HfO₂, Al₂O₃ and (Al₂O₃)_x(HfO₂)1-X Thin Films Were Applied Using Metal-Organic Substances as the Precursors. Dependences of Growth Rates on Process Parameters Were Studied. The Chemical Structure and Properties of the Films and Electrophysical Characteristics of the Test Structures Were Investigated.

Abstract: It has been established that hardness and density of diamond-like carbon (DLC) layers can be raised by increasing ion energy during deposition, decreasing H-content and by increasing sp³-fraction. To confirm differences in hydrogen content of hydrogen containing and hydrogen free DLC films deposited at different bias voltages, layers were etched in oxygen atmosphere in a capacitively coupled plasma device. By employing real-time ellipsometry measurements, the H-content of the hydrogen containing a-C:H layers were estimated by determining the optical constants n and k (n-real part and k-imaginary part of the refractive index). In addition, DLC layers were analyzed by X-ray photoelectron spectroscopy to estimate the ratio of sp^²- and sp^³-hybridization. The mechanical and tribological properties of the coatings were evaluated by means of nanoindentation and ball-on-disc-tests. Finally correlations between these properties, H-content and sp³/sp²-ratio were obtained in an effort to explain different tribological behaviors of DLC-layers.

Abstract: We investigated the structural evolution of Polystyrene films at various conditions through multi-wavelength ellipsometry. We studied the thickness of film dependent of the process of swelling/shrinking, and the influence of the intensity of atmosphere，combining with PM (polarization microscope) to characterize the surface morphology. Results indicated that the increase and reduction of the film thickness are non-linear. Maximum swelling ratio and the variation of film thickness depend on the initial thickness of film and the intensity of atmosphere. Furthermore, the results demonstrated that in-situ multi-wavelength ellipsometry is an unique means to investigate the behavior of swelling and shrinking of film.

Abstract: Optical properties and surface state of semiconductor CdTe crystals subjected to irradiation with nanosecond laser pulses were studied. Ellipsometric parameters Δ and Ψ were measured on two opposite surfaces of (111) oriented CdTe wafers before. The samples were subjected to polishing chemical etching and laser irradiation with energy densities lower and higher than the melting threshold of CdTe. The morphology and structure of CdTe crystals were monitored before and after treatments. Irradiation formed a thin modified surface layer on the both sides of CdTe crystals (Cd- and Te-terminated) with the similar optical constants n and k, respectively. However, the effective thicknesses of such modified layers differed and depended on the chemical and laser treatment conditions and also on the faces of CdTe(111) crystals.

Abstract: Features of the optical properties of nanostructured strongly correlated oxides CuO, Y3Fe5O12, and FeBO3 in a wide range of energies, which includes both the fundamental absorption region, low-energy electron excitations, and phonon modes have been investigated by methods of optical spectroscopy. Absorption and reflection spectra, Raman spectra, and ellipsometry measurements are carried out on the samples of oxide nanostructured ceramics. High-density nanoceramics were prepared by shock-wave loading and high pressure torsion methods from coarse-grain oxide powders. Strong smearing of the fundamental absorption edge is revealed for all nanoceramics. Anomalous red shift of the absorption edge Eg is found in CuO nanooxide. The features of the optical functions in nanooxides of 3d-metals may be attributed to high defectiveness of nanooxides, peculiarities in the electronic structure of strongly correlated oxides and their tendency to electronic phase separation.

Abstract: We have investigated the oxidation process of SiC (000-1) C-face at low oxygen partial pressures using an in-situ spectroscopic ellipsometry. The oxide growth rate decreased steeply at the early stage of oxidation and then slowly decreased with increasing oxide thickness. The initial oxide growth rate was almost proportional to the oxygen　partial　pressure for both the polar directions. This result suggests that the initial interfacial reaction rate is constant regardless of the concentration of oxidants reaching the interface.

Abstract: Germanium modified silicon surfaces in combination with two step epitaxial growth technique consisting in conversion of the Si(100) substrate near surface region into 3C-SiC(100) followed by an epitaxial growth step allows the manipulation of the residual strain. The morphology and the residual strain in dependence on the Ge coverage are only affected by the Ge quantity and not by the growth technique. The positive effect of the Ge coverage is attributed to changes in the morphology during the conversion process, as well as to a reduced lattice and thermal mismatch between SiC and Si in consequence of alloying the near surface region of the Si substrate with Ge.

Abstract: We have investigated the growth and characteristics of nanoscaled thin films of carbon, nickel, and platinum. The nanoscaled thin films were deposited on Si and quartz substrates with or without a surface layer of carbon, nickel, or platinum using a DC magnetron sputter deposition technique. The thicknesses, which were determined using ellipsometry, are all less than 10 nm. The film structures were examined using glazing angle incident x-ray diffractometry and Raman spectroscopy. The electrical and optical properties were determined using a four point probe technique and UV-VIS-IR spectrometry, respectively.

Abstract: In order to demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystallinity of the films on Si (111) have been investigated by changing the flow rate of C3H8 at the substrate temperature of 850 °C. Oriented polycrystalline 3C-SiC film grew under the C/Si of 3 – 5 with a-C. It is suggested that etching effects of growing surface by hydrogen radicals generated from C3H8 decomposition is lowered by lowering the substrate temperature. The crystallinity has been investigated by reflection electron diffraction (RED) and a X-ray diffraction (XRD). The thickness and the surface roughness of the films were investigated by an ellipsometric measurement.

Abstract: In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm2) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-Ox) layer with current density and the improvement of the Si-Hx band after a-Si:H coating.