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Articles by keyword: «Epitaxial Growth»

• 3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
  Published in: Silicon Carbide and Related Materials - 1999 (p149)
• 3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
  Published in: Silicon Carbide and Related Materials - 1999 (p153)
• 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p209)
• 4H-SiC Epitaxial Growth for High-Power Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p131)
• 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
  Published in: Silicon Carbide and Related Materials 2005 (p153)
• 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions
  Published in: Silicon Carbide and Related Materials 2010 (p55)
• 4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method
  Published in: Silicon Carbide and Related Materials 2009 (p925)
• 4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p185)
• AlN Epitaxial Films Grown by ECR Plasma Assisted Metalorganic Chemical Vapor Deposition under Controlled Plasma Condition in Afterglow Region
  Published in: Silicon Carbide and Related Materials - 1999 (p1511)
• Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
  Published in: Silicon Carbide and Related Materials 2001 (p207)
• Amorphization and Solid Phase Epitaxial Growth in Ion Implanted III-V Compound Semiconductors
  Published in: Diffusion in Materials - DIMAT 1992 (p989)
• An Evaluation of Effective Surface-Diffusion Distance Depending on the Coverage in Vapour Phase Epitaxy of A-B Compounds
  Published in: Diffusion in Materials - DIMAT 1992 (p485)
• An Overview of SiC Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p125)
• Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process
  Published in: Ultra Clean Processing of Semiconductor Surfaces IX (p173)
• Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation
  Published in: Technology Evolution for Silicon Nano-Electronics (p98)