| Paper Title | Page |
|---|---|
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10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor Authors: Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang |
239 |
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3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor Authors: Wei Ji, Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu |
149 |
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Authors: Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu, Wei Ji |
153 |
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4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition Authors: Kazutoshi Kojima, Tetsuo Takahashi, Yuuki Ishida, Satoshi Kuroda, Hajime Okumura, Kazuo Arai |
209 |
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4H-SiC Epitaxial Growth for High-Power Devices Authors: Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi |
131 |
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4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness Authors: Takashi Aigo, M. Sawamura, Tatsuo Fujimoto, Masakazu Katsuno, Hirokatsu Yashiro, Hiroshi Tsuge, Masashi Nakabayashi, Taizo Hoshino, Noboru Ohtani |
153 |
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4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions Authors: Birgit Kallinger, Bernd Thomas, Patrick Berwian, Jochen Friedrich, Gerd Trachta, Arnd Dietrich Weber |
55 |
|
4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method Authors: Bharat Krishnan, Joseph Neil Merrett, Galyna Melnychuk, Yaroslav Koshka |
925 |
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4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth Authors: B.E. Landini, George R. Brandes |
185 |
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Authors: Kanji Yasui, S. Hoshino, Takashi Akahane |
1511 |