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Articles by keyword: «Epitaxial Layer»

• A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
  Published in: Silicon Carbide and Related Materials 2001 (p443)
• Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p95)
• Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p315)
• Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
  Published in: Silicon Carbide and Related Materials 2005 (p135)
• Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation
  Published in: Silicon Carbide and Related Materials 2001 (p597)
• Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p851)
• Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
  Published in: Silicon Carbide and Related Materials - 2002 (p467)
• Electrical Properties of SiGe Epitaxial Layers for Photovoltaic Application as Studied by Scanning Electron Microscopical Methods
  Published in: Beam Injection Assessment of Defects in Semiconductors (p509)
• Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2003 (p705)
• Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing
  Published in: Silicon Carbide and Related Materials 2000 (p799)
• Epitaxial Growth of Hg_1-xCd_xTe
  Published in: Advanced Materials for High Technology Applications (p57)
• Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p141)
• Evaluation of Effective Carrier Lifetime in Epitaxial Silicon Layers
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p771)
• Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2004 (p117)
• Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping
  Published in: Silicon Carbide and Related Materials 2007 (p349)