| Paper Title | Page |
|---|---|
|
A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers Authors: Seo Young Ha, William M. Vetter, Michael Dudley, Marek Skowronski |
443 |
|
Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes Authors: Christian Hecht, Bernd Thomas, René A. Stein, Peter Friedrichs |
95 |
|
Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings Authors: Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida |
27 |
|
Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons Authors: V. Khomenkov, D. Bisello, M. Boscardin, Mara Bruzzi, A. Candelori, G.-F. Dalla Betta, A.P. Litovchenko, C. Piemonte, R. Rando, F. Ravotti, N. Zorzi |
315 |
|
Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs Authors: Bernd Thomas, Christian Hecht, René A. Stein, Peter Friedrichs |
135 |
|
Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation Authors: Michio Tajima, M. Tanaka, Norihiro Hoshino |
597 |
|
Complex Study of SiC Epitaxial Films Authors: E.M. Geyfman, V.V. Chibirkin, G.Yu. Kamentsev, N.A. Gartsev, N.M. Davydova, B.P. Surin |
593 |
|
Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy Authors: Makato Fujimaki, Rudi Ono, Mitsuhiro Kushibe, Koh Masahara, Kazutoshi Kojima, Takashi Shinohe, Hideyo Okushi, Kazuo Arai |
851 |
|
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions Authors: Evgenia V. Kalinina, G. Kholuyanov, G. Onushkin, D.V. Davydov, Anatoly M. Strel'chuk, A.S. Zubrilov, Anders Hallén, Andrey O. Konstantinov, V.A. Skuratov, J. Staňo |
467 |
|
Authors: O. Krüger, Winfried Seifert, Martin Kittler, A. Gutjahr, M. Konuma, K. Said, Jef Poortmans |
509 |