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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
Epitaxy
»
125 papers on 9 pages:
1
[2]
[3]
...
[9]
[next]
4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
Published in:
Silicon Carbide and Related Materials - 1999
(p505)
4H-SiC Device Scaling Development on Repaired Micropipe Substrates
Published in:
Silicon Carbide and Related Materials - 1999
(p1203)
4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
Published in:
Silicon Carbide and Related Materials 2010
(p123)
A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process
Published in:
Silicon Carbide and Related Materials 2006
(p57)
Advanced Real Time Metrology of AlGaN/GaN and InGaN/GaN Epitaxy
Published in:
5th FORUM ON NEW MATERIALS PART D
(p124)
Advances in SiC Materials and Technology for Schottky Diode Applications
Published in:
Silicon Carbide and Related Materials 2001
(p1119)
AFM Study of In Situ Etching of 4H and 6H SiC Substrates
Published in:
Silicon Carbide, III-Nitrides and Related Materials
(p363)
Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
Published in:
Silicon Carbide and Related Materials 2006
(p61)
Applications of ZrO
2
- CeO
2
- La
2
O
3
Films in Multilayered Oxide Heterostructures
Published in:
Progress in Advanced Materials and Processes
(p47)
As-Grown 4H-SiC Epilayers with Magnetic Properties
Published in:
Silicon Carbide and Related Materials 2003
(p747)
Atomic Layer Epitaxy of (Si
1-x
C
1-y
)Ge
x+y
Layers on 4H-SiC
Published in:
Silicon Carbide and Related Materials 2005
(p1559)
Atomic Migration in Bulk and Thin Film L1
0
Alloys: Experiments and Molecular Dynamics Simulations
Published in:
Diffusion and Thermodynamics of Materials
(p41)
Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
Published in:
Silicon Carbide and Related Materials - 2002
(p435)
Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology
Published in:
Silicon Carbide and Related Materials 2003
(p981)
Changes in Texture by Irradiation with Ar++ of Iridium and Platinum Layers on Oriented Sapphire Substrates
Published in:
Textures of Materials - ICOTOM 10
(p535)
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