| Paper Title | Page |
|---|---|
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Authors: Evgenia V. Kalinina, A.S. Zubrilov, V. Solov'ev, N.I. Kuznetsov, Anders Hallén, Andrey O. Konstantinov, S. Karlsson, S.V. Rendakova, Vladimir Dmitriev |
505 |
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4H-SiC Device Scaling Development on Repaired Micropipe Substrates Authors: T.E. Schattner, Jeff B. Casady, M.C.D. Smith, Michael S. Mazzola, Vladimir Dmitriev, S.V. Rentakova, Stephen E. Saddow |
1203 |
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4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer Authors: Gil Yong Chung, Mark J. Loboda, Jie Zhang, Jian Wei Wan, E.P. Carlson, T.J. Toth, Robert E. Stahlbush, Marek Skowronski, R. Berechman, Siddarth G. Sundaresan, Ranbir Singh |
123 |
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A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process Authors: James D. Oliver, Brian H. Ponczak |
57 |
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Advanced Real Time Metrology of AlGaN/GaN and InGaN/GaN Epitaxy Authors: Tong Ho Kim, Soo Jeong Choi, April S. Brown, Maria Losurdo, Giuseppe Valerio Bianco, Maria M. Giangregorio, Giovanni Bruno |
124 |
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Advances in SiC Materials and Technology for Schottky Diode Applications Authors: Lea Di Cioccio, Thierry Billon |
1119 |
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AFM Study of In Situ Etching of 4H and 6H SiC Substrates Authors: S. Karlsson, Nils Nordell |
363 |
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AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates Authors: Katja Tonisch, Robert Benzig, Gernot Ecke, Jörg Pezoldt |
103 |
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Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling Authors: Y. Shishkin, Rachael L. Myers-Ward, Stephen E. Saddow, Alexander Galyukov, A.N. Vorob'ev, D. Brovin, D. Bazarevskiy, R.A. Talalaev, Yuri N. Makarov |
61 |
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Applications of ZrO2 - CeO2 - La2O3 Films in Multilayered Oxide Heterostructures Authors: Anatole N. Khodan, J.-P. Contour, D. Michel |
47 |