Papers by Keyword: FOM

Abstract: In this paper, a 5.7kV 4H-SiC Junction Barrier Schottky diode(JBS) with non-uniform field limiting rings termination is simulated and fabricated successfully based on a epitaxial thickness of 49μm and the doping concentration about 1.04×10¹⁵cm^-3 respectively. The reverse breakdown voltage could reach to 5.7kV at least at reverse current of 200μA. And the on-state voltage is 3V at the forward current of 2A, corresponding to an on-resistance of 32mΩ•cm². The corresponding figure-of- merit of V_B²/ R_SP-ON for our fabricated device is 1.026 GW/cm², which is closing to the optimal levels among several reported SiC JBS.

Abstract: The general design of HLA based communication command equipment operation simulation system is given to solve the difficulty of large equipment operation training. Firstly, the simulation system and its constitution are introduced. Secondly, two different federation runtime structures including single federation basic structure and multiple federations structure are designed according to system architecture. Thirdly, information interaction mode of training and FOM are concluded. Finally, two kinds of system application modes consisting of communication skill training and communication command training are presented.

Abstract: This paper describes the 0.35 um SiGe BiCMOS Voltage Controlled Oscillators (VCOs). One is Cross-coupled VCO, and the other one is Colpitts VCO. Both of them are designed with the same method. For achieving lower noise, the differential structure was used at this design. The center frequency for Cross-coupled VCO and Colpitts VCO is 5GHz. The tuning range of Cross-coupled VCO and Colpitts VCO is 1750 MHz and 230 MHz, respectively. The phase noise and the figure of merit (the FOM) for Cross-coupled VCO, are -155.5 dBc/Hz and -224.7dBc/Hz @1MHz offset frequency at an oscillation frequency of 5GHz, respectively. The phase noise and the figure of merit value of Colpitts VCO is -134.1 dBc/Hz and -200.3 dBc/Hz at the 1MHz offset from the center frequency of 5GHz. For The DC current of Cross-coupled and Colpitts VCO is 2 mA and 4 mA , respectively. Considering a 3.0 V supply Cross-coupled voltage (VCC) for both VCOs. The output power of Cross-coupled VCO is -3.94 dBm and the Colpitts VCO achieves an output power of 5.428 dBm. Agilent ADS software is used throughout this work

Abstract: Diamond is nominated as a material candidate for future high power device due to its superior material properties and resulting very high FOM. In this paper, our recent progresses and the expected possibilities of diamond for power electronics applications are introduced as short review. Firstly for the epitaxial growth, by adopting step-flow epitaxial growth by off- angle substrate with optimized growth conditions, we have succeeded in reducing these killer defects almost six orders from 106cm-2 to almost 100cm-2 levels. For the substrate, our recently developed technology to fabricate diamond plates from bulk, 12x13mm2 size are available to use, that can avoid fabrication difficulties with small size substrate. Secondly for the device, primitive studies showed possibly for the advantage of diamond such as low reverse leakage current, high temperature and high current density operation.