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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
Field Effect Mobility
»
10 papers on 1 page:
1
4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide
Published in:
Silicon Carbide and Related Materials 2001
(p1073)
Critical Issues for MOS Based Power Devices in 4H-SiC
Published in:
Silicon Carbide and Related Materials 2008
(p743)
Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si
2
H
6
Published in:
Polycrystalline Semiconductors III
(p305)
Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material
Published in:
Silicon Carbide and Related Materials 2004
(p833)
High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
Published in:
Silicon Carbide and Related Materials 2004
(p837)
High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
Published in:
Silicon Carbide and Related Materials 2004
(p841)
Nitridation of the SiO
2
/SiC Interface by N
+
Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
Published in:
Silicon Carbide and Related Materials 2009
(p491)
Nitrogen and Hydrogen Induced Trap Passivation at the SiO
2
/4H-SiC Interface
Published in:
Silicon Carbide and Related Materials 2005
(p949)
Polysilicon Thin-Film Transistors Based on Frequency Doubled cw-Nd: YVO
4
Laser Crystallized Silicon
Published in:
Polycrystalline Semiconductors VII
(p55)
SiC and GaN MOS Interfaces – Similarities and Differences
Published in:
Silicon Carbide and Related Materials 2009
(p473)
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