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Articles by keyword: «Field Effect Mobility»

• 4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide
  Published in: Silicon Carbide and Related Materials 2001 (p1073)
• Critical Issues for MOS Based Power Devices in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p743)
• Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si₂H₆
  Published in: Polycrystalline Semiconductors III (p305)
• Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material
  Published in: Silicon Carbide and Related Materials 2004 (p833)
• High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
  Published in: Silicon Carbide and Related Materials 2004 (p837)
• High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
  Published in: Silicon Carbide and Related Materials 2004 (p841)
• Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2009 (p491)
• Nitrogen and Hydrogen Induced Trap Passivation at the SiO₂/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials 2005 (p949)
• Polysilicon Thin-Film Transistors Based on Frequency Doubled cw-Nd: YVO₄ Laser Crystallized Silicon
  Published in: Polycrystalline Semiconductors VII (p55)
• SiC and GaN MOS Interfaces – Similarities and Differences
  Published in: Silicon Carbide and Related Materials 2009 (p473)