Papers by Keyword: Field Emission Display

Abstract: The vapor transport method was used to grow ZnO nanowires on ZnO:Al (AZO) deposited silicon substrate. The optimal characteristic of ZnO nanowires was grown at 1100°C for 70 min, together with a ZnO/graphite weight ratio of 1:1 and N2/O2 flow ratio of 7:6. ZnO nanowires had a single crystalline structure and grew with a prefer direction in the (002) plane. Photoluminescence measurement showed that UV and visible green emission bands were observed. The turn-on electric field of ZnO nanowires was 0.11 V/μm and the maximum field emission current density was 1.8 mA/cm2. A high field enhancement factor of 1782 was evaluated.

Abstract: In this study, a 10"-sized panel with novel tetrode structure was tried to prevent broadening of electrons emitted from CNTs. The structure of the novel tetrode is composed of CNT emitters on a cathode electrode, a gate electrode, an extracting electrode coated on the top of a hopping electron spacer (HES), and an anode. HES contains funnel-shaped holes whose inner surfaces are coated with MgO. Electrons extracted through the gate are collected inside the funnel-shaped holes and hop along the hole surface to the top extracting electrode. The effects of HES on emission characteristics of field emission display (FED) were investigated. An active ozone treatment for the complete removal of residues of organic binders in the emitter devices was applied to the FED panel as a post-treatment