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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
Frenkel Pairs
»
12 papers on 1 page:
1
A Sharp Defect-Annealing Stage Below Room Temperature in Irradiated N-Type Indium Phosphide
Published in:
Defects in Semiconductors 19
(p837)
Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
Published in:
Silicon Carbide and Related Materials 2008
(p377)
Equilibrium Grain Boundary Solute Segregation Accelerated by Irradiation-Created Frenkel Pairs
Published in:
Defects and Diffusion in Metals
(p21)
First-Principles Simulations of Frenkel Pair Formation and Annealing in Irradiated ß-SiC
Published in:
Gettering and Defect Engineering in Semiconductor Technology XII
(p247)
Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy
Published in:
Defects in Semiconductors 18
(p1527)
Frenkel Pairs on the Te Sublattice of ZnTe? An ODMR Study
Published in:
Defects in Semiconductors 17
(p423)
Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
Published in:
Silicon Carbide and Related Materials 2000
(p509)
Intrinsic Point Defects and Grown-in Defects in Silicon
Published in:
Special Defects in Semiconducting Materials
(p1)
Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation
Published in:
Gettering and Defect Engineering in Semiconductor Technology XII
(p253)
The Creation of Radiation Defects in Lithium Fluoride Single Crystals
Published in:
Defects in Insulating Materials
(p599)
The Enhancement of Diffusion Processes in BCC Phases of Anomalous Metals by Fluctuation-Induced Frenkel Pairs
Published in:
Diffusion in Materials DIMAT2000
(p61)
Vacancies and Interstitial Atoms in eֿ-Irradiated Silicon
Published in:
Defects in Semiconductors 19
(p503)
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