Papers by Keyword: Ga-Doped

Abstract: First-principles calculations using the plane-wave pseudo-potential (PWPP) method based on the density functional theory (DFT) is employed to study the crystal structure, band gap, density of states of anatase TiO2 doped with gadolinium (Gd). The generalized gradient approximation (GGA) based on exchange-correlation energy optimization is employed to calculate them. The calculated results demonstrate that the mixing of gadolinium dopants induces states with original titanium 3d and oxygen 2p valence band attributes to the band gap narrowing. This can enhance the photocatalytic activity of anatase TiO2.

Abstract: Quasi-vertical ZnS nanostructures with different Ga doping level ( ZnS:Ga nanowalls ) have been synthesized in high yield from the mixed powders in the vacuum furnace at 1150 oC. ZnS:Ga nanowalls were grown vertically on the substrate with the size in the range of several microns and the thickness down to 15 nm and have very rough edges. The possible growth mechanism of nanowalls is likely governed by a vapor-solid (VS) growth mechanism. Room-temperature cathodoluminescence spectra of ZnS : Ga nanowalls show two emission peaks at approximately 443 nm and 578 nm. The emission mechanisms are discussed.