HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «GaAs»

• Ab Initio Study of Cl Impurity at GaAs Surfaces
  Published in: Defects in Semiconductors 18 (p543)
• Ab-Initio Calculation of the Hyperfine Fields for Deep A₁ Donors in GaAs under Pressure
  Published in: Defects in Semiconductors 17 (p1035)
• Ab-Initio Investigations on Diffusion of Halogen Atoms in GaAs
  Published in: Defects in Semiconductors 19 (p1821)
• AES Study of the GaAs-Germanium Oxynitride Interface
  Published in: Passivation of Metals and Semiconductors (p165)
• All-Optical Material Charaterization Method by the Application of Bistability in Luminescence
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p291)
• An Analytical Approach for Studying Diffusion and Drift Effects of Positrons at the Metal/Semi-Insulating GaAs Interface
  Published in: Positron Annihilation - ICPA-11 (p539)
• An Evaluation of Effective Surface-Diffusion Distance Depending on the Coverage in Vapour Phase Epitaxy of A-B Compounds
  Published in: Diffusion in Materials - DIMAT 1992 (p485)
• An Optical Zeeman Study on Fe³⁺ in GaAs and InP
  Published in: Defects in Semiconductors 17 (p797)
• Analyzing Method of Surface Structures by X-Ray Photoelectron Spectroscopy (XPS)
  Published in: Grain Growth in Polycrystalline Materials II (p755)
• Annealing Behaviour of High Energy ¹²⁰Sn Implanted GaAs
  Published in: Semiconductor Materials and Technology (p98)
• Application of the Combined Channeling Method at Higher Ion Energies on Cyclotron
  Published in: Materials Science Applications of Ion Beam Techniques (p361)
• Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?
  Published in: Defects in Semiconductors 18 (p1061)
• As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature
  Published in: Defects in Semiconductors 19 (p957)
• Atomic Configuration of Oxygen Negative-U Center in GaAs
  Published in: Defects in Semiconductors 19 (p873)
• Behaviors of Nonequilibrium Carriers in Er, O-Codoped GaAs for 1.5μm Light-Emitting Devices with Extremely Stable Wavelength
  Published in: Advanced Structural and Functional Materials Design (p159)