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Articles by keyword: «GaN»

• 288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs
  Published in: Silicon Carbide and Related Materials 2007 (p1321)
• 600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications
  Published in: Silicon Carbide and Related Materials 2007 (p1251)
• Advanced Real Time Metrology of AlGaN/GaN and InGaN/GaN Epitaxy
  Published in: 5th FORUM ON NEW MATERIALS PART D (p124)
• Atomic Resolution and In Situ Characterization of Structural Ceramics
  Published in: SiAlONs and Non-oxides (p43)
• Characterization of GaN p-n Junction Grown on Si (111) Substrate by Plasma-Assisted Molecular Beam Epitaxy
  Published in: Nanomaterials (p139)
• Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p1297)
• Comparative Study of GaN—Based LED Grown on Different Substrates
  Published in: Advanced Engineering Materials (p2241)
• Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions
  Published in: Silicon Carbide and Related Materials 2008 (p951)
• Determination of Thickness for the Individual Layer of Strained P-Type Al_0.11Ga_0.89NGaN Superlattice by High Angle Annular Dark Field Scanning Transmission Electron Microscopy
  Published in: New Materials and Advanced Materials (p879)
• Dislocations in Gan Grown on Silicon
  Published in: Progress in New Materials and Mechanics Research (p51)
• Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs
  Published in: Silicon Carbide and Related Materials 2007 (p1345)
• Effect of Heat Treatment on Structural and Optoelectronic Properties of GaN Epilayers
  Published in: Optoelectronic Materials (p1314)
• Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method
  Published in: PRICM7 (p1716)
• Effect of Thermal Annealing in NH₃ Ambient on Nanoporous n-GaN and Subsequent Epilayer
  Published in: Frontiers of Manufacturing and Design Science (p3016)
• Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation
  Published in: Silicon Carbide and Related Materials 2010 (p804)