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Articles by keyword: «Galium Nitride (GaN)»

• A Codoping Method in GaN Proposed by Ab Initio Electronic-Structure Calculations
  Published in: Defects in Semiconductors 19 (p1185)
• AB Initio Studies of Atomic-Scale Defects in GaN and AlN
  Published in: Defects in Semiconductors 19 (p1119)
• Achievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In Exposure
  Published in: Silicon Carbide and Related Materials - 1999 (p1459)
• AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart Cut^TM Technology
  Published in: Silicon Carbide and Related Materials 2003 (p1621)
• AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation
  Published in: Silicon Carbide and Related Materials 2001 (p1527)
• An Ab Initio Study of Intrinsic Stacking Faults in GaN
  Published in: Silicon Carbide and Related Materials 2003 (p1617)
• An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1173)
• Anisotropic Properties of GaN Studied by Raman Scattering
  Published in: Silicon Carbide and Related Materials 2005 (p1517)
• Asymmetric Interface Densities on n and p Type GaN MOS Capacitors
  Published in: Silicon Carbide and Related Materials 2005 (p1525)
• Broadband Push-Pull Microwave Power Amplifier Using AlGaN/GaN HEMTs on SiC
  Published in: Silicon Carbide and Related Materials 2001 (p1515)
• Carrier Localization in Gallium Nitride
  Published in: Defects in Semiconductors 18 (p31)
• Cathodoluminescence Study on ZnO and GaN
  Published in: Beam Injection Assessment of Defects in Semiconductors (p171)
• Characteristics Comparison between GaN Epilayers Grown on Patterned and Unpatterned Sapphire Substrate (0001)
  Published in: Advanced Materials and Processing IV (p355)
• Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al₂O₃(0001) Studied by TEM
  Published in: Defects in Semiconductors 19 (p1755)
• Charactrization of Residual Transition Metal Ions in GaN and AIN
  Published in: Defects in Semiconductors 18 (p55)