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Articles by keyword: «Gallium Arsenide»

• Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p313)
• Anharmonicity of The C_AsLocal Oscillator in Gallium Arsenide
  Published in: Defects in Semiconductors 18 (p1577)
• Annealing Effects at the Near-Surface Region of Gallium Arsenide
  Published in: Positron Annihilation - ICPA-9 (p1383)
• Arsenic Interstitial Pairs in GaAs
  Published in: Defects in Semiconductors 19 (p923)
• Atomic Transport in Semiconductions: Diffusion Mechanisms and Chemical Trends
  Published in: Diffusion in Materials - DIMAT 1992 (p895)
• Cathodoluminescence Investigation of Diffusion Studies on the Arsenic Sublattice in Gallium Arsenide
  Published in: Beam Injection Assessment of Defects in Semiconductors (p183)
• Computational Study of GaAs Microclusters
  Published in: Modeling of Materials (p177)
• Defect Injection and Diffusion in Semiconductors
  Published in: Reactive Phase Formation at Interfaces and Diffusion Processes (p475)
• Donor Metastable States and the Polaron Effect in n-Type Gallium Arsenide
  Published in: Defects in Semiconductors 18 (p1019)
• Dopant Diffusion and Defect Formation in III-V Semiconductors: Zinc Diffusion in GaAs
  Published in: Diffusion in Materials DIMAT 1996 (p1095)
• Effect of Device Temperature on RF FET Power Density
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p969)
• Erbium Related Defects in Gallium Arsenide
  Published in: Defects in Semiconductors 19 (p1551)
• Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
  Published in: Positron Annihilation - ICPA-12 (p111)
• Gallium and Arsenic Recovery from Waste Gallium Arsenide by Wet Refined Methods
  Published in: Advanced Engineering Materials (p2115)
• Growth of High Purity GaAs Layers by Vapour Phase Epitaxy
  Published in: Semiconductor Materials and Technology (p10)